Rf amplifier devices and methods of manufacturing including modularized designs with flip chip interconnections

ABSTRACT

A transistor amplifier includes a die comprising a gate terminal, a drain terminal, and a source terminal, a circuitry module on the transistor die and electrically coupled to the gate terminal, the drain terminal, and/or the source terminal, and one or more passive electrical components on a first surface of the circuitry module. The one or more passive electrical components are electrically coupled between the gate terminal and a first lead of the transistor amplifier and/or between the drain terminal and a second lead of the transistor amplifier.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a continuation-in-part of and claims priorityto U.S. patent application Ser. No. 17/018,762, filed on Sep. 11, 2020,which is a continuation-in-part of and claims priority to U.S. patentapplication Ser. No. 16/906,610, filed on Jun. 19, 2020, which claimspriority under 35 U.S.C. § 119 to U.S. Provisional Patent ApplicationSer. No. 63/004,765, filed Apr. 3, 2020. The present application is alsoa continuation-in-part of and claims priority to each of U.S. patentapplication Ser. No. 17/018,721, filed on Sep. 11, 2020 and U.S. patentapplication Ser. No. 17/737,054, filed on May 5, 2022, which is acontinuation of U.S. patent application Ser. No. 16/888,957, now U.S.Pat. No. 11,356,070, filed on Jun. 1, 2020. The entire contents of eachof these applications are incorporated herein by reference.

FIELD

The present disclosure is directed to integrated circuit devices, andmore particularly, to structures for integrated circuit devicepackaging.

BACKGROUND

RF power amplifiers are used in a variety of applications such as basestations for wireless communication systems, multi-stage andmultiple-path amplifiers (e.g., Doherty amplifiers), etc. The signalsamplified by the RF power amplifiers often include signals that have amodulated carrier having frequencies in the megahertz (MHz) to gigahertz(GHz) range. For example, Electrical circuits requiring high powerhandling capability while operating at high frequencies, such as R-band(0.5-1 GHz), S-band (3 GHz), X-band (10 GHz), Ku-band (12-18 GHz),K-band (18-27 GHz), Ka-band (27-40 GHz) and V-band (40-75 GHz) havebecome more prevalent. In particular, there is now a high demand forradio frequency (“RF”) transistor amplifiers that are used to amplify RFsignals at frequencies of, for example, 500 MHz and higher (includingmicrowave frequencies). These RF transistor amplifiers may need toexhibit high reliability, good linearity and handle high output powerlevels.

Many RF power amplifier designs utilize semiconductor switching devicesas amplification devices. Examples of these switching devices includepower transistor devices, such as MOSFETs (metal-oxide semiconductorfield-effect transistors), DMOS (double-diffused metal-oxidesemiconductor) transistors, HEMTs (high electron mobility transistors),MESFETs (metal-semiconductor field-effect transistors), LDMOS(laterally-diffused metal-oxide semiconductor) transistors, etc.

RF amplifiers are typically formed as semiconductor integrated circuitchips. Most RF amplifiers are implemented in silicon or using widebandgap semiconductor materials (i.e., having a band-gap greater than1.40 eV), such as silicon carbide (“SiC”) and Group III nitridematerials. As used herein, the term “Group III nitride” refers to thosesemiconducting compounds formed between nitrogen and the elements inGroup III of the periodic table, usually aluminum (Al), gallium (Ga),and/or indium (In). The term also refers to ternary and quaternarycompounds, such as AlGaN and AlInGaN. These compounds have empiricalformulas in which one mole of nitrogen is combined with a total of onemole of the Group III elements.

Silicon-based RF amplifiers are typically implemented using LDMOStransistors, and can exhibit high levels of linearity with relativelyinexpensive fabrication. Group III nitride-based RF amplifiers aretypically implemented using HEMTs, primarily in applications requiringhigh power and/or high frequency operation where LDMOS transistoramplifiers may have inherent performance limitations.

RF transistor amplifiers may include one or more amplification stages,with each stage typically implemented as a transistor amplifier. Inorder to increase the output power and current handling capabilities, RFtransistor amplifiers are typically implemented in a “unit cell”configuration in which a large number of individual “unit cell”transistors are arranged electrically in parallel. An RF transistoramplifier may be implemented as a single integrated circuit chip or“die,” or may include a plurality of dies. When multiple RF transistoramplifier dies are used, they may be connected in series and/or inparallel.

RF transistor amplifiers often include matching circuits, such asimpedance matching circuits, that are designed to improve the impedancematch between the active transistor die (e.g., including MOSFETs, HEMTs,LDMOS, etc.) and transmission lines connected thereto for RF signals atthe fundamental operating frequency, and harmonic termination circuitsthat are designed to at least partly terminate harmonic products thatmay be generated during device operation such as second and third orderharmonic products. The termination of the harmonic products alsoinfluences generation of intermodulation distortion products.

The RF amplifier transistor die(s) as well as the impedance matching andharmonic termination circuits may be enclosed in a device package. A dieor chip may refer to a small block of semiconducting material or othersubstrate on which electronic circuit elements are fabricated.Integrated circuit packaging may refer to encapsulating one or more diesin a supporting case or package that protects the dies from physicaldamage and/or corrosion, and supports the electrical contacts forconnection to external circuits. The input and output impedance matchingcircuits in an integrated circuit device package typically include LCnetworks that provide at least a portion of an impedance matchingcircuit that is configured to match the impedance of the activetransistor die to a fixed value. Electrical leads may extend from thepackage to electrically connect the RF amplifier to external circuitelements such as input and output RF transmission lines and bias voltagesources.

Some conventional methods for assembling RF power devices may involveassembling the transistor die and some of the matching networkcomponents in a ceramic or over-molded package on a CPC (copper,copper-molybdenum, copper laminate structure) or copper flange. Thetransistor die, capacitors, and input/output leads may be interconnectedwith wires, such as gold and/or aluminum wires. Such an assembly processmay be slow and sequential (e.g., one package bonded at a time), andassembly costs may be high (e.g., due to cost of gold wires andexpensive wire-bond machines).

SUMMARY

According to some embodiments, a radio frequency (“RF”) transistoramplifier, comprising a semiconductor layer structure comprising firstand second major surfaces and a plurality of unit cell transistors onthe first major surface that are electrically connected in parallel,each unit cell transistor comprising a gate finger coupled to a gatemanifold, a drain finger coupled to a drain manifold, and a sourcefinger. The semiconductor layer structure is free of a via to the sourcefingers on the second major surface.

In some embodiments, the RF transistor amplifier further includes acoupling element on the first major surface, the coupling elementcomprising a gate connection pad configured to be connected to the gatemanifold, a drain connection pad configured to be connected to the drainmanifold, and a source connection pad configured to be connected to onesof the source fingers.

In some embodiments, the RF transistor amplifier further includes acarrier substrate on the second major surface of the semiconductor layerstructure.

In some embodiments, the RF transistor amplifier further includes athermally and/or electrically conductive layer on the second majorsurface of the semiconductor layer structure between the semiconductorlayer structure and the carrier substrate.

In some embodiments, the RF transistor amplifier further includes acircuitry module on the semiconductor layer structure, the circuitrymodule comprising a gate lead connection pad electrically coupled to thegate manifold and a drain lead connection pad electrically coupled tothe drain manifold.

In some embodiments, the RF transistor amplifier further includes aninput lead that is electrically coupled to the gate lead connection pad,the input lead configured to extend externally from a package containingthe RF transistor amplifier, and an output lead that is electricallycoupled to the drain lead connection pad, the output lead configured toextend externally from the package containing the RF transistoramplifier.

In some embodiments, the RF transistor amplifier further includes one ormore circuit elements that are mounted on the first side and/or secondside of the circuitry module.

In some embodiments, the RF transistor amplifier further includes athermally and/or electrically conductive auxiliary spacer layer on theone or more circuit elements.

In some embodiments, the semiconductor layer structure further comprisesa high electron mobility transistor (HEMT) or a laterally-diffusedmetal-oxide semiconductor (LDMOS) transistor.

According to some embodiments, a transistor amplifier includes a groupIII-nitride based amplifier die comprising a gate terminal, a drainterminal, and a source terminal on a first surface of the amplifier die;and a circuitry module on and electrically coupled to the gate terminal,drain terminal and source terminal of the amplifier die on the firstsurface of the amplifier die. The circuitry module comprises one or morecircuit elements that are coupled between the gate terminal and a firstlead of the transistor amplifier and/or between the drain terminal and asecond lead of the transistor amplifier, the circuitry module has afirst surface and a second surface that is on an opposite side of thecircuitry module from the first surface, and the first surface of thecircuitry module is adjacent the first surface of the amplifier die.

In some embodiments, the one or more circuit elements are mounted on thefirst surface and/or second surface of the circuitry module.

In some embodiments, the transistor amplifier further includes athermally and/or electrically conductive auxiliary spacer layer on theone or more circuit elements.

In some embodiments, the one or more circuit elements are formed withinthe circuitry module.

In some embodiments, the first and/or second lead are coupled to thesecond surface of the circuitry module.

In some embodiments, the first and/or second lead are coupled to thefirst surface of the circuitry module.

In some embodiments, the circuitry module comprises a firstinterconnection pad and a second interconnection pad on the firstsurface of the circuitry module, the first interconnection pad isconfigured to be coupled to the gate terminal of the amplifier die, andthe second interconnection pad is configured to be coupled to the drainterminal of the amplifier die.

In some embodiments, the circuitry module further comprises a thirdinterconnection pad on the first surface of the circuitry module that isconfigured to be coupled to the source terminal of the amplifier die.

In some embodiments, the transistor amplifier further includes acoupling element between the amplifier die and the circuitry module.

According to some embodiments, a radio frequency (“RF”) transistoramplifier includes an RF transistor amplifier die having a first majorsurface and a second major surface, the RF transistor amplifier diecomprising a gate terminal, a drain terminal and a source terminal onthe first major surface, a circuitry module on the first major surfaceof the RF transistor amplifier die, the circuitry module comprising agate lead connection pad electrically coupled to the gate terminal and adrain lead connection pad electrically coupled to the drain terminal, acarrier substrate on the second major surface of the RF transistoramplifier die, and a thermally and/or electrically conductive spacerlayer between the RF transistor amplifier die and the carrier substrate.

In some embodiments, the circuitry module comprises a first sideadjacent the first major surface of the RF transistor amplifier die anda second side opposite the first side, and the circuitry modulecomprises one or more circuit elements that are coupled to the gateterminal and/or to the drain terminal.

In some embodiments, the one or more circuit elements are mounted on thefirst side and/or second side of the circuitry module.

In some embodiments, the RF transistor amplifier further includes athermally and/or electrically conductive auxiliary spacer layer on theone or more circuit elements.

In some embodiments, the spacer layer and the auxiliary spacer layerform an integrated spacer layer.

In some embodiments, the RF transistor amplifier further includes aninput lead and/or an output lead coupled to the second side of thecircuitry module.

In some embodiments, the RF transistor amplifier further includes acoupling element between the RF transistor amplifier die and thecircuitry module, the coupling element having a bottom surface adjacentthe first major surface of the RF transistor amplifier die and a topsurface opposite the bottom surface. The top surface of the couplingelement comprises a gate connection pad configured to be connected to afirst interconnection pad of the circuitry module, a drain connectionpad configured to be connected to a second interconnection pad of thecircuitry module, and a source connection pad configured to be connectedto a third interconnection pad of the circuitry module.

In some embodiments, the RF transistor amplifier further includessidewalls and a lid. The carrier substrate, the sidewalls, and the liddefine an internal cavity, and the RF transistor amplifier die is withinthe internal cavity.

In some embodiments, the RF transistor amplifier further includes anovermold material on the circuitry module and RF transistor amplifierdie.

In some embodiments, the RF transistor amplifier die is a Group IIInitride-based RF transistor amplifier die.

In some embodiments, an operating frequency of the RF transistoramplifier is in the R-band, S-band, X-band, Ku-band, K-band, Ka-band,and/or V-band.

Other devices, apparatus, and/or methods according to some embodimentswill become apparent to one with skill in the art upon review of thefollowing drawings and detailed description. It is intended that allsuch additional embodiments, in addition to any and all combinations ofthe above embodiments, be included within this description, be withinthe scope of the invention, and be protected by the accompanying claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a schematic cross-sectional view of a conventional highelectron mobility transistor.

FIG. 1B is a schematic side view of a conventional packaged Group IIInitride-based RF transistor amplifier. FIG. 1C is a schematiccross-sectional view taken along line 1C-1C of FIG. 1B that shows thestructure of the top metallization of an RF transistor amplifier diethat is included in the RF transistor amplifier of FIG. 1B. FIG. 1D is aschematic side view of another conventional Group III nitride-based RFtransistor amplifier.

FIG. 2A is a schematic side view of a Group III nitride-based RFtransistor amplifier according to some embodiments of the presentinvention.

FIG. 2B is a schematic plan view of an RF transistor amplifier die thatis part of the Group III nitride-based RF transistor amplifier of FIG.2A, taken along line 2B-2B of FIG. 2A.

FIG. 2C is a cross-sectional view taken along line 2C-2C of FIG. 2B.

FIG. 2D is a cross-sectional view taken along line 2D-2D of FIG. 2B.

FIG. 2E is a cross-sectional view taken along line 2E-2E of FIG. 2B.

FIG. 2F is a cross-sectional view taken along line 2F-2F of FIG. 2B.

FIGS. 2G to 2L are cross-sectional views of additional embodiments ofthe present invention.

FIG. 3A is a schematic cross-sectional view of an RF transistoramplifier coupled to a circuitry module, according to some embodimentsof the present invention.

FIG. 3B is a schematic cross-sectional view of an RF transistoramplifier die coupled to a circuitry module, according to someembodiments of the present invention.

FIG. 3C is a schematic cross-sectional view of an RF transistoramplifier die incorporating a redistribution layer that is coupled to acircuitry module, according to some embodiments of the presentinvention.

FIG. 3D is a schematic cross-sectional view of a circuitry modulecoupled to a plurality of RF transistor amplifiers, according to someembodiments of the present invention. FIG. 3E is a schematiccross-sectional view of a circuitry module coupled to a plurality of RFtransistor amplifier dies, according to some embodiments of the presentinvention.

FIG. 4A is a schematic cross-sectional view of an RF transistoramplifier and circuitry module coupled to a carrier substrate, accordingto some embodiments of the present invention.

FIG. 4B is a schematic cross-sectional view of an RF transistoramplifier and circuitry module coupled to a carrier substrate without acoupling element, according to some embodiments of the presentinvention.

FIG. 4C is a schematic cross-sectional view of a plurality of RFtransistor amplifier dies coupled to a circuitry module and placed on acarrier substrate, according to some embodiments of the presentinvention.

FIGS. 5A to 5C are schematic views of various packaging options of theRF transistor amplifier, according to some embodiments of the presentinvention.

FIGS. 6A to 6C are schematic cross-sectional views of additionalembodiments of an RF transistor amplifier coupled to a circuitry module,according to some embodiments of the present invention.

FIGS. 7A to 7E are schematic diagrams illustrating methods of couplingcircuitry modules and RF transistor amplifier dies according to certainembodiments of the present invention.

FIGS. 8A and 8B are schematic cross-sectional views of various packagingoptions of a circuitry module, according to some embodiments of thepresent invention.

FIG. 9A is a plan view of an embodiment of a circuitry module, accordingto some embodiments of the present invention.

FIG. 9B is a cross-sectional view taken along line 9B-9B of FIG. 9A.

FIG. 9C is a cross-sectional view taken along line 9C-9C of FIG. 9A.

FIG. 9D is a cross-sectional view of the circuitry module of FIG. 9A,mounted on a substrate according to some embodiments of the presentinvention.

FIGS. 10A and 10B are schematic cross-sectional views of variouspackaging options of the circuitry module, according to some embodimentsof the present invention.

FIGS. 11A, 11B, 11C, and 11D die are schematic cross-sectional views ofadditional embodiments of an RF transistor amplifier coupled to acircuitry module, according to some embodiments of the presentinvention.

FIGS. 12A, 12B, 12C, and 12D are schematic cross-sectional views ofadditional embodiments of an RF transistor amplifier die coupled to acircuitry module, according to some embodiments of the presentinvention.

FIGS. 13A, 13B, 13C, and 13D are schematic cross-sectional views ofadditional embodiments of an RF transistor amplifier die coupled to acircuitry module and incorporating a spacer, according to someembodiments of the present invention.

FIGS. 14A, 14B, 14C, and 14D are schematic cross-sectional views ofvarious packaging options of a circuitry module, according to someembodiments of the present invention.

FIGS. 15A, 15B, 15C, and 15D are schematic cross-sectional views ofadditional RF transistor amplifier embodiments including circuitrymodule and incorporating mechanisms to couple to the first and secondcircuit elements, according to some embodiments of the presentinvention.

FIGS. 16A, 16B, 16C, and 16D are schematic cross-sectional views ofvarious packaging options of a circuitry module, according to someembodiments of the present invention.

FIGS. 17 and 18 are schematic cross-sectional views of RF transistoramplifiers including active and passive component assemblies accordingto some embodiments of the present invention.

FIGS. 19A, 19B, and 19C are schematic cross-sectional views of variouspassive component assemblies according to some embodiments of thepresent invention.

FIGS. 20A, 20B, and 20C are schematic cross-sectional views of variousactive component assemblies according to some embodiments of the presentinvention.

FIGS. 21A, 21B, 22, 23A, 23B, 24A, 24B, 24C, 24D, 25A, 25B, and 25C areschematic views of various packaging options for RF transistoramplifiers including active and passive component assemblies accordingto some embodiments of the present invention.

FIGS. 26A, 26B, and 26C are schematic circuit diagrams illustratingvarious circuit topologies that may be implemented by combinations ofactive and passive component assemblies according to some embodiments ofthe present invention.

DETAILED DESCRIPTION

In the following detailed description, numerous specific details are setforth to provide a thorough understanding of embodiments of the presentdisclosure. However, it will be understood by those skilled in the artthat the present disclosure may be practiced without these specificdetails. In some instances, well-known methods, procedures, components,and circuits have not been described in detail so as not to obscure thepresent disclosure. It is intended that all embodiments disclosed hereincan be implemented separately or combined in any way and/or combination.Aspects described with respect to one embodiment may be incorporated indifferent embodiments although not specifically described relativethereto. That is, all embodiments and/or features of any embodiments canbe combined in any way and/or combination.

Pursuant to embodiments of the present invention, Group IIInitride-based RF transistor amplifiers are provided that include RFtransistor amplifier dies that have their gate terminals, drainterminals, and source terminals all located on the top side of the RFtransistor amplifier die. In some embodiments, the RF transistoramplifiers may not include bond wires for the gate and drainconnections, which may reduce an amount of inductance present in thecircuit. The top side contacts may allow a coupling element to becoupled directly to the gate, drain, and source terminals of the RFtransistor amplifier dies. The coupling element may be further connectedto additional circuitry, such as harmonic termination circuitry, inputimpedance matching circuitry, and/or output impedance matching circuitryin a convenient manner. In particular embodiments where the substrate ofthe transistor die has a high thermal conductivity, such as a SiC growthsubstrate for a Group III nitride based HEMT, the die can be mountedwith the substrate on a thermally conductive carrier substrate orsubmount, such as a metal slug, leadframe, or flange, to provideimproved thermal dissipation of the heat generated by the die from theamplifier package.

FIG. 1A is a schematic cross-sectional view of a conventional highelectron mobility transistor 10. As shown in FIG. 1A, the high electronmobility transistor 10 may be formed on a substrate 22 such as, forexample, a silicon carbide, silicon, or sapphire. A channel layer 24 isformed on the substrate 22. A barrier layer 26 is formed on the channellayer 24 opposite the substrate 22. The channel layer 24 may include,for example, gallium-nitride (GaN) and the barrier layer 26 may include,for example, aluminum gallium-nitride (AlGaN).

The channel layer 24, and barrier layer 26 may together form asemiconductor structure 90 on the substrate 22. A source contact 56 anda drain contact 54 are formed on an upper surface of the barrier layer26 and are laterally spaced apart from each other. The source contact 56and the drain contact 54 may form an ohmic contact to the barrier layer26.

A gate contact 52 is formed on the upper surface of the barrier layer 26between the source contact 56 and the drain contact 54. Atwo-dimensional electron gas (2 DEG) layer is formed at a junctionbetween the channel layer 24 and the barrier layer 26 when the HEMTdevice 10 is biased to be in its conducting or “on” state. The 2 DEGlayer acts as a highly conductive layer that allows current to flowbetween the source and drain regions of the device that are beneath thesource contact 56 and the drain contact 54, respectively.

The source contact 56 may be coupled to a reference signal such as, forexample, a ground voltage. The coupling to the reference signal may beprovided by a via 66 that extends from a lower surface 22A of thesubstrate 22, through the substrate 22 to an upper surface 26A of thebarrier layer. The via 66 may expose a lower surface 56A of the sourcecontact 56. A backmetal layer 35 may be formed on the lower surface 22Aof the substrate 22 and on side walls of the via 66. The backmetal layer35 may directly contact the source contact 56. Thus, the backmetal layer35, and a signal coupled thereto, may be electrically connected to thesource contact 56.

In some embodiments, one or more insulating layers 50 may directlycontact the upper surface of the semiconductor structure 90 (e.g.,contact the upper surface 26A of the barrier layer 26). The one or moreinsulating layers 50 may serve as passivation layers for the HEMT device10. In some embodiments, additional metal contacts (not shown) may beprovided to contact the gate contact 52 and/or the drain contact 54.

As noted above, Group III nitride-based RF amplifiers, including theHEMT device illustrated in FIG. 1A, are often used in high power and/orhigh frequency applications. Typically, high levels of heat aregenerated within the Group III nitride-based RF amplifier die(s) duringoperation. If the RF die(s) become too hot, the performance (e.g.,output power, efficiency, linearity, gain, etc.) of the RF amplifier maydeteriorate and/or the RF amplifier die(s) may be damaged. As such,Group III nitride-based RF amplifiers are typically mounted in packagesthat may be optimized for heat removal. FIGS. 1B and 1C illustrate aconventional packaged Group III nitride-based RF amplifier. Inparticular, FIG. 1B is a schematic side view of a conventional packagedGroup III nitride-based RF amplifier 100, and FIG. 1C is a schematiccross-sectional view of the RF transistor amplifier die that is includedin the packaged Group III nitride-based RF transistor amplifier 100,where the cross-section is taken along line 1C-1C of FIG. 1B. It will beappreciated that FIGS. 1B-1C (and various of the other figures) arehighly simplified diagrams and that actual RF amplifiers may includemany more unit cells and various circuitry and elements that are notshown in the simplified figures herein.

As shown in FIG. 1B, the Group III nitride-based RF amplifier 100includes an RF amplifier die 110 that is mounted within a package 170.The package 170 includes a gate lead 172, a drain lead 174, a carriersubstrate 176, and a housing 178. The RF transistor amplifier die 110 ismounted on the upper surface of the carrier substrate 176 which maycomprise, for example, a metal flange. The RF amplifier die 110 has atop side 112 and a bottom side 114. The RF amplifier die 110 includes abottom side (also referred to as a “back” side) metallization structure120, a semiconductor layer structure 130 and a top side metallizationstructure 140 that are sequentially stacked. The back side metallizationstructure 120 comprises a source terminal 126. The RF amplifier 100 maybe a HEMT-based RF amplifier, such as that illustrated in FIG. 1A, inwhich case the semiconductor layer structure 130 may include at least achannel layer and a barrier layer, which are typically formed on asemiconductor or insulating growth substrate (such as a SiC, silicon, orsapphire substrate). The growth substrate, even if formed of anon-semiconductor material, may be considered to be part of thesemiconductor layer structure 130. The top side metallization structure140 includes, among other things, a gate terminal 142, and a drainterminal 144.

Input matching circuits 190 and/or output matching circuits 192 may alsobe mounted within the housing 178. The matching circuits 190, 192 may beimpedance matching circuits that match the impedance of the fundamentalcomponent of RF signals input to or output from the RF transistoramplifier 100 to the impedance at the input or output of the RFtransistor amplifier die 110, respectively, and/or harmonic terminationcircuits that are configured too short to ground harmonics of thefundamental RF signal that may be present at the input or output of theRF transistor amplifier die 110, such as second order or third orderharmonics. As schematically shown in FIG. 1B, the input and outputmatching circuits 190, 192 may be mounted on the metal flange 176. Thegate lead 172 may be connected to the input matching circuit 190 by oneor more first bond wires 182, and the input matching circuit 190 may beconnected to the gate terminal 142 of RF amplifier die 110 by one ormore second bond wires 183. Similarly, the drain lead 174 may beconnected to the output matching circuit 192 by one or more fourth bondwires 185, and the output matching circuit 192 may be connected to thedrain terminal 144 of RF amplifier die 110 by one or more third bondwires 184. The source terminal 126 of RF transistor amplifier die 110may be mounted directly on the metal flange 176. The metal flange 176may provide the electrical connection to the source terminal 126 and mayalso serve as a heat dissipation structure. The first through fourthbond wires 182-185 may form part of the input and/or output matchingcircuits. The housing 178 may comprise a ceramic housing, and the gatelead 172 and the drain lead 174 may extend through the housing 178. Thehousing 178 may comprise multiple pieces, such as a frame that forms thelower portion of the sidewalls and supports the gate and drain leads172, 174, and a lid that is placed on top of the frame. The interior ofthe device may comprise an air-filled cavity.

FIG. 1C is a schematic cross-sectional view of the RF amplifier die 110that is taken through a portion of the top side metallization structure140. Dielectric layers that isolate the various conductive elements ofthe top-side metallization structure 140 from each other are not shownin FIG. 1C to simplify the drawing.

As shown in FIG. 1C, the RF transistor amplifier die 110 comprises aGroup III nitride-based HEMT RF transistor amplifier that has aplurality of unit cell transistors 116 that each include a gate finger152, a drain finger 154 and a source finger 156. The gate fingers 152are electrically connected to a common gate manifold 146, and the drainfingers 154 are electrically connected to a common drain manifold 148.The gate manifold 146 is electrically connected to the gate terminal 142(e.g., through a conductive via that extends upwardly from the gatemanifold 146) which may be implemented as a gate bond pad (see FIG. 1B),and the drain manifold 148 is electrically connected to the drainterminal 144 (e.g., through a conductive via that extends upwardly fromthe drain manifold 148) which may be implemented as a drain bond pad(see FIG. 1B). The source fingers 156 are electrically connected to thesource terminal 126 via a plurality of conductive source vias 166 thatextend through the semiconductor layer structure 130. The conductivesource vias 166 may comprise metal-plated vias that extend completelythrough the semiconductor layer structure 130.

Referring again to FIG. 1B, the carrier substrate 176 (which here is ametal flange) may act as a heat sink that dissipates heat that isgenerated in the RF amplifier die 110. The heat is primarily generatedin the upper portion of the RF amplifier die 110 where relatively highcurrent densities are generated in, for example, the channel regions ofthe unit cell transistors 116 This heat may be transferred though boththe source vias 166 and the semiconductor layer structure 130 to thecarrier substrate 176.

FIG. 1D is a schematic side view of a conventional packaged Group IIInitride-based RF transistor amplifier 100′ that is similar to the RFtransistor amplifier discussed above with reference to FIG. 1B. RFtransistor amplifier 100′ differs from RF transistor amplifier 100 inthat it includes a different package 170′. The package 170′ includes ametal submount 176 (which acts as a metal heat sink and can beimplemented as a metal slug), as well as gate and drain leads 172′,174′. In some embodiments, a metal lead frame may be formed that is thenprocessed to provide the metal submount 176 and/or the gate and drainleads 172′, 174′. RF transistor amplifier 100′ also includes a plasticovermold 178′ that at least partially surrounds the RF transistoramplifier die 110, the leads 172′, 174′ and the metal submount 176. Theplastic overmold 178′ replaces the ceramic sidewalls and lid 178included in RF transistor amplifier 100.

Depending on the embodiment, the packaged transistor amplifier 100′ caninclude, for example, a monolithic microwave integrated circuit (MMIC)as the RF transistor amplifier die 110 in which case the RF transistoramplifier die 110 incorporates multiple discrete devices. In someembodiments, the packaged RF transistor amplifier 100 can includemultiple RF transistor amplifier die that are connected in series toform a multiple stage RF transistor amplifier and/or may includemultiple transistor die that are disposed in multiple paths (e.g., inparallel) to form an RF transistor amplifier with multiple RF transistoramplifier die and multiple paths, such as in a Doherty amplifierconfiguration

In other cases, Group III nitride-based RF amplifiers may be implementedas MMIC devices in which one or more RF amplifier die(s) are implementedtogether with their associated impedance matching and harmonictermination circuits in a single, integrated circuit die. Examples ofsuch Group III nitride-based RF amplifiers are disclosed, for example,in U.S. Pat. No. 9,947,616, the entire content of which is incorporatedherein by reference. When the RF transistor amplifier die 110 is a MMICimplementation, the input matching circuits 190 and/or the outputmatching circuits 192 may be omitted (since they may instead beimplemented within the RF transistor amplifier die 110) and the bondwires 182 and/or 185 may extend directly from the gate and drain leads172′, 174′ to the gate and drain terminals 142, 144.

Conventional Group III nitride-based RF transistor amplifiers, such asthe RF transistor amplifier 100 of FIGS. 1A-1D, may use bond wires 182,184 to connect the RF transistor amplifier die 110 other portions of thepackage. These bond wires 182, 184 have inherent inductance that may beused to implement some of the inductors in the impedance matching and/orharmonic termination circuits of the RF transistor amplifiers. Theamount of inductance provided may be varied by changing the lengthand/or the cross-sectional area (e.g., the diameter) of the bond wires182, 184 so that the bond wires 182, 184 provide a desired amount ofinductance. Unfortunately, as applications move to higher frequencies,the inductance of the bond wires 182, 184 may exceed a desired amount ofinductance for the impedance matching and/or harmonic terminationcircuits. When this occurs, bond wires 182, 184 that are very shortand/or that have large cross-sectional areas may be used in an effort todecrease the inductance thereof to suitable levels. Very short bondwires 182, 184, however, may be difficult to solder in place, which mayincrease manufacturing costs, and/or may result in higher device failurerates. Bond wires 182, 184 having large cross-sectional areas mayrequire larger gate and drain bond pads on the RF transistor amplifierdie, which may result in an increase in the overall size of the RFtransistor amplifier die, which is also undesirable. Moreover, in somehigher frequency applications, even very short bond wires 182, 184having large cross-sectional areas may have too much inductance suchthat the matching networks cannot, for example, properly terminate thesecond or third order harmonics. While the RF transistor amplifiers maybe implemented as MMIC devices in order to avoid the problem of too muchinductance in the bond wires 182, 184, MMIC RF amplifiers are moreexpensive to fabricate and can only be used in the frequency range ofthe matching circuits, reducing flexibility.

Moreover, wire bonding equipment that is typically used for high volumemanufacturing may have a tolerance of +/−1 mil, meaning that the lengthof any particular wire bond may vary by as much a 2 mils (i.e., +/−1 milon each end of the bond wire). For high frequency applications, thevariation in inductance associated with 2 mils of a wire bond may besignificant, and hence the performance of the matching circuits may bedegraded if the bond wires are 1-2 mils too short or long from a desirednominal length. Forming the gate and drain terminals on the top side ofthe device and using a coupling element to connect these terminals toadditional circuitry may largely eliminate this process variation,resulting in improved performance.

Embodiments of the present invention will now be discussed in furtherdetail with reference to the accompanying figures.

FIGS. 2A-2G depict a Group III nitride-based RF transistor amplifier 200according to certain embodiments of the present invention. Inparticular, FIG. 2A is a schematic side view of the Group IIInitride-based RF transistor amplifier 200. FIG. 2B is a schematic planview of an RF transistor amplifier die 210 that is part of the Group IIInitride-based RF transistor amplifier 200 of FIG. 2A that is taken alongline 2B-2B of FIG. 2A. FIGS. 2C through 2F are schematic cross-sectionalviews of the RF transistor amplifier die 210 that are taken along lines2C-2C through 2F-2F of FIG. 2B, respectively. FIG. 2G is an alternativeembodiment of the source terminal illustrated in FIG. 2D. FIGS. 2H to 2Lare cross-sectional views of additional embodiments of Group IIInitride-based RF transistor amplifiers 200′, 200″ according to certainembodiments of the present invention.

As shown in FIG. 2A, in some embodiments, the Group III nitride-based RFtransistor amplifier 200 may include an RF transistor amplifier die 210that is mounted on the bottom surface of a coupling element 270. The RFtransistor amplifier die 210 has a top side 212 and a back side 214. TheRF transistor amplifier die 210 includes a top side metallizationstructure 220, a semiconductor layer structure 230, and a bottom sidethermal layer 240 that are sequentially stacked. The top sidemetallization structure 220 comprises a gate terminal 222, a drainterminal 224, and one or more source terminal(s) 226. The RF transistoramplifier 200 may be a HEMT-based RF transistor amplifier, in which casethe semiconductor layer structure 230 may include at least a channellayer and a barrier layer, as will be discussed in greater detail withreference to FIGS. 2C and 2D. In some configurations, as will bediscussed further herein, the coupling element 270 may be omitted fromthe RF transistor amplifier 200.

The coupling element 270 may be configured to couple to the gateterminal 222, the drain terminal 224, and the one or more sourceterminal(s) 226. In some cases, the coupling element 270 may comprise aredistribution layer (RDL) laminate structure and/or interposer. An RDLlaminate structure refers to a substrate that has conductive layerpatterns and/or conductive vias. RDL laminate structures may befabricated using semiconductor processing techniques by depositingconductive and insulating layers and/or patterns on a base material andby forming vias and routing patterns (e.g., from copper) within thestructure for transmitting signals through the RDL laminate structure.For example, as illustrated in FIG. 2A, the coupling element 270 mayinclude conductive patterns 273 formed in an encapsulating structure277.

A gate connection pad 272, a drain connection pad 274, and a sourceconnection pad 276 are provided on the top surface of the couplingelement 270. Each of these connection pads 272, 274, 276 may comprise,for example, an exposed copper pad, though the present invention is notlimited thereto. The gate connection pad 272 may be electrically coupledto the gate terminal 222 by one or more conductive patterns 273 in thecoupling element 270. Similarly, the drain connection pad 274 may beelectrically coupled to the drain terminal 224 by one or more conductivepatterns 273 in the coupling element 270, and the source connection pad276 may be electrically coupled to source terminal(s) 226 by one or moreconductive patterns 273 in the coupling element 270.

In some embodiments, the conductive patterns 273 of the coupling element270 may be configured in a fan-out (FO) configuration. The FOconfiguration may allow for the spacing of the connections to therespective source, gate, and drain terminals to be enlarged, allowingfor increased separation of the connections. However, the presentinvention is not limited to an FO connection. In some embodiments, afan-in connection, fan-in and fan-out configurations, or otherconfigurations may be used.

In some embodiments, the coupling element 270 and/or the RDL laminatestructure may be formed as part of a wafer level processing (WLP)operation, but the present invention is not limited thereto. Forexample, the coupling element 270 can be formed by disposing conductivepillars on the gate terminal 222, drain terminal 224, and the one ormore source terminal(s) 226. In some embodiments, the conductive pillarsmay comprise copper. For example, the conductive pillars may be formedby electroplating a copper seed using one or more masks to form thepatterns. The conductive pillars may form the conductive patterns 273.In addition, the gate connection pad 272, the drain connection pad 274,and the source connection pad 276 may be formed on the conductivepatterns 273. The conductive patterns 273, gate connection pad 272,drain connection pad 274, and source connection pad 276 may be disposedat least partially within the encapsulating structure 277, which mayinclude an overmold material. The overmold material may include, forexample, silicon oxide, silicon nitride, an oxide of the conductivepatterns 273, a polymer, a molding compound, and/or a combinationthereof. The overmold material may be processed (e.g., planarized) toexpose the gate connection pad 272, the drain connection pad 274, and/orthe source connection pad 276. In some embodiments, the formation of thecoupling element 270 may be performed at the wafer level, and individualones of the RF transistor amplifier dies 210 and/or RF transistoramplifiers 200 may be singulated from the wafer.

In some embodiments, the coupling element 270 may be formed in achip-first or chip-last process. In a chip-first process, the RDLstructure may be formed on the die 210 (or wafer including die 210). Forexample, a seed layer may be deposited (e.g., on one or more of the gateterminal 222, the drain terminal 224, and the one or more sourceterminal(s) 226. The seed may then be patterned and electroplated toform a layer of conductive material. This process may be repeatedmultiple times to from the conductive patterns 273 of the couplingelement 270. These conductive patterns 273 may then be enclosed in theencapsulating structure 277 to form the coupling element 270.

In a chip-last process, the RDL layers of the coupling element 270 maybe formed on a temporary carrier layer. The conductive patterns 273 maybe formed in a manner similar to the chip-first process on the temporarycarrier layer. When complete, the coupling element 270 may be decoupledfrom the temporary carrier layer and then recoupled to the die 210. Forexample, the coupling element 270 may be coupled to one or more of thegate terminal 222, the drain terminal 224, and the one or more sourceterminal(s) 226 (e.g., via solder).

Other coupling elements 270 may alternatively be used such as, forexample, a printed circuit board (e.g., a multi-layer printed circuitboard), a ceramic substrate that includes conductive vias and/or pads,or any coupling structures for the RF transistor amplifier die 210 thatcan make electrical connections to the top side 212 of the RF transistoramplifier die 210.

The arrangement of conductive patterns 273 illustrated in FIG. 2A aremerely an example, and other arrangements are possible without deviatingfrom the present invention. For example, in some embodiments, conductivepatterns 273 of the coupling element 270 may extend adjacent sides ofthe RF transistor amplifier die 210. In some embodiments, the couplingelement 270 may have terminals other than those illustrated in FIG. 2A

The thermal layer 240 may be on the back side 214 of the RF transistoramplifier die 210. The thermal layer 240 may be a thermally conductivelayer configured to facilitate thermal transfer between the RFtransistor amplifier die 210 and a carrier substrate to which the RFtransistor amplifier die 210 is mounted. In some embodiments, thethermal layer 240 may be omitted. In some embodiments, the thermal layer240 may be a die attach layer, such as a eutectic layer. The thermallayer 240 can be on the transistor amplifier die 210 and/or extend ontothe encapsulating structure 277. The thermal layer 240 can be a metallayer to form a eutective or other metal bond. In some embodiments, thethermal layer 240 can be a thermal adhesive.

The RF transistor amplifier die 210 may comprise a Group IIInitride-based HEMT RF transistor amplifier that includes a plurality ofunit cell transistors 216 that are electrically connected to each otherin parallel. This can best be seen in FIG. 2B, which schematicallydepicts a plan view of RF transistor amplifier die 210 below the topside metallization structure 220. The top side metallization structure220, including the gate terminal 222, the drain terminal 224, and theone or more source terminals 226, are illustrated as dashed lines inFIG. 2B.

As shown in FIG. 2B, the RF transistor amplifier die 210 includes a gatemanifold 242 and a drain manifold 244, a plurality of gate fingers 252,a plurality of drain fingers 254 and a plurality of source fingers 246,all of which may be formed on an upper surface of the semiconductorlayer structure 230. The gate manifold 242 and gate fingers 252 are partof a gate electrode of the RF transistor amplifier die 210. The gatemanifold 242 and the gate fingers 252 may be implemented as a firstmonolithic metal pattern, but the present invention is not limitedthereto. The drain manifold 244 and drain fingers 254 are part of adrain electrode of the RF transistor amplifier die 210, and may beimplemented as a second monolithic metal pattern, but the presentinvention is not limited thereto.

The gate fingers 252 may be formed of materials that are capable ofmaking a Schottky contact to a Group III nitride-based semiconductormaterial, such as Ni, Pt, Cu, Pd, Cr, W, and/or WSiN. The drain fingers254 and source fingers 246 may include a metal (e.g., TiAlN, TiSiNi, orthe like) that can form an ohmic contact to Group III nitride-basedmaterials. A dielectric layer (or a series of dielectric layers) thathelp isolate the gate manifold/fingers 242, 252, the drainmanifold/fingers 244, 254 and the source fingers 246 from each other isnot shown in FIG. 2B to better illustrate the elements of the RFtransistor amplifier die 210.

The gate terminal 222, drain terminal 224, and source terminal(s) 226may be provided on the upper surface of the RF transistor amplifier die210. The gate terminal 222 may be physically and electrically connectedto the gate manifold 242 (e.g., by conductive vias), the sourceterminal(s) 226 may be physically and electrically connected to thesource fingers 246 (e.g., by conductive vias), and the drain terminal224 may be physically and electrically connected to the drain manifold244 (e.g., by conductive vias). Though the various terminals areillustrated as being directly connected to the gate/drain manifoldand/or source fingers, it will be understood that, in some embodiments,intermediate elements may be present. For example, in some embodiments,capacitors, inductors, resistors, etc., may be coupled between theterminal and the respective manifold and/or finger. As an example, acapacitor may be formed on the surface of the RF transistor amplifierdie 210 that is coupled to the drain manifold 244, and the drainterminal 224 may be coupled to the capacitor.

One of the unit cell transistors 216 is also shown in FIG. 2B. As shown,the unit cell transistor 216 includes a gate finger 252, a drain finger254, and a source finger 246 along with the underlying portion of thesemiconductor layer structure 230. Since all of the gate fingers 252 areelectrically connected to a common gate manifold 242, all of the drainfingers 254 are electrically connected to a common drain manifold 244,and all of the source fingers 246 are electrically connected togethervia the source terminal(s) 226 (discussed below), it can be seen thatthe unit cell transistors 216 are all electrically connected together inparallel.

The unit cell transistors 216 may be HEMT devices. Suitable structuresfor Group III-nitride-based HEMT devices that may utilize embodiments ofthe present invention are described, for example, in commonly assignedU.S. Patent Publication No. 2002/0066908A1 published Jun. 6, 2002, for“Aluminum Gallium Nitride/Gallium Nitride High Electron MobilityTransistors Having A Gate Contact On A Gallium Nitride Based Cap SegmentAnd Methods Of Fabricating Same,” U.S. Patent Publication No.2002/0167023A1 for “Group-III Nitride Based High Electron MobilityTransistor (HEMT) With Barrier/Spacer Layer,” published Nov. 14, 2002,U.S. Patent Publication No. 2004/0061129 for “Nitride-Based TransistorsAnd Methods Of Fabrication Thereof Using Non-Etched Contact Recesses,”published on Apr. 1, 2004, U.S. Pat. No. 7,906,799 for “Nitride-BasedTransistors With A Protective Layer And A Low-Damage Recess” issued Mar.15, 2011, and U.S. Pat. No. 6,316,793 entitled “Nitride BasedTransistors On Semi-Insulating Silicon Carbide Substrates,” issued Nov.13, 2001, the disclosures of which are hereby incorporated herein byreference in their entirety.

Referring to FIGS. 2C and 2D, the semiconductor layer structure 230includes a plurality of semiconductor layers. In the depictedembodiment, a total of two semiconductor layers are shown, namely achannel layer 234 and a barrier layer 236 that is on a top side of thechannel layer 234. The semiconductor layer structure 230 may includeadditional semiconductor and/or non-semiconductor layers. For example,the semiconductor layer structure 230 may include a growth substrate 232on which the other semiconductor layers are grown. The growth substrate232 may be a semi-insulating silicon carbide (SiC) substrate that maybe, for example, the 4H polytype of silicon carbide. Other siliconcarbide candidate polytypes may include the 3C, 6H, and 15R polytypes.The growth substrate 232 may be a High Purity Semi-Insulating (HPSI)substrate, available from Cree, Inc. The term “semi-insulating” is useddescriptively herein, rather than in an absolute sense.

In some embodiments of the present invention, the silicon carbide bulkcrystal of the growth substrate 232 may have a resistivity equal to orhigher than about 1×10⁵ ohm-cm at room temperature. Exemplary SiCsubstrates that may be used in some embodiments of the present inventionare manufactured by, for example, Cree, Inc., of Durham, N.C., theassignee of the present invention, and methods for producing suchsubstrates are described, for example, in U.S. Pat. No. Re. 34,861, U.S.Pat. Nos. 4,946,547, 5,200,022, and 6,218,680, the disclosures of whichare incorporated by reference herein in their entireties. Althoughsilicon carbide may be used as a substrate material, embodiments of thepresent application may utilize any suitable substrate, such as sapphire(Al₂O₃), aluminum nitride (AlN), aluminum gallium nitride (AlGaN),gallium nitride (GaN), silicon (Si), GaAs, LGO, zinc oxide (ZnO), LAO,indium phosphide (InP), and the like. The growth substrate 232 may be asilicon carbide wafer, and the RF transistor amplifier 200 may beformed, at least in part, via wafer-level processing, and the wafer maythen be diced to provide a plurality of individual RF transistoramplifiers 200.

SiC has a much closer crystal lattice match to Group III nitrides thandoes sapphire (Al₂O₃) or silicon, which are very common substratematerials for Group III nitride devices. The closer lattice match of SiCmay result in Group III nitride films of higher quality than thosegenerally available on sapphire or silicon. SiC also has a very highthermal conductivity so that the total output power of Group III nitridedevices on silicon carbide is, typically, not as limited by thermaldissipation of the substrate as in the case of the same devices formedon sapphire. Also, the availability of semi-insulating SiC substratesmay provide for device isolation and reduced parasitic capacitance.

Optional buffer, nucleation, and/or transition layers (not shown) may beprovided on the growth substrate 232 beneath the channel layer 234. Forexample, an AlN buffer layer may be included to provide an appropriatecrystal structure transition between an SiC growth substrate 232 and theremainder of the semiconductor layer structure 230. Additionally, strainbalancing transition layer(s) may also be provided as described, forexample, in commonly assigned U.S. Patent Publication 2003/0102482A1,published Jun. 5, 2003, and entitled “Strain Balanced NitrideHeterojunction Transistors And Methods Of Fabricating Strain BalancedNitride Heterojunction Transistors,” the disclosure of which isincorporated herein by reference as if set forth fully herein.

The channel layer 234 and the barrier layer 236 may each be formed byepitaxial growth in some embodiments. Techniques for epitaxial growth ofGroup III nitrides have been described in, for example, U.S. Pat. Nos.5,210,051, 5,393,993, and 5,523,589, the disclosures of which are alsoincorporated by reference herein in their entireties. The channel layer234 may have a bandgap that is less than the bandgap of the barrierlayer 236 and the channel layer 234 may also have a larger electronaffinity than the barrier layer 236. The channel layer 234 and thebarrier layer 236 may include Group III-nitride based materials.

In some embodiments, the channel layer 234 is a Group III nitridematerial, such as Al_(x)Ga_(1-x)N where 0≤x<1, provided that the energyof the conduction band edge of the channel layer 234 is less than theenergy of the conduction band edge of the barrier layer 236 at theinterface between the channel and barrier layers 234, 236. In certainembodiments of the present invention, x=0, indicating that the channellayer 234 is gallium nitride (“GaN”). The channel layer 234 may also beother Group III nitrides such as InGaN, AlInGaN or the like. The channellayer 234 may be undoped or unintentionally doped and may be grown to athickness of, for example, greater than about 2 nm. The channel layer234 may also be a multi-layer structure, such as a superlattice orcombinations of GaN, AlGaN or the like.

The channel layer 234 may have a bandgap that is less than the bandgapof at least a portion of the barrier layer 236, and the channel layer234 may also have a larger electron affinity than the barrier layer 236.In certain embodiments, the barrier layer 236 is AlN, AlInN, AlGaN orAlInGaN with a thickness of between about 0.1 nm and about 10 nm ormore. In particular embodiments, the barrier layer 236 is thick enoughand has a high enough Al composition and doping to induce a significantcarrier concentration at the interface between the channel layer 234 andthe barrier layer 236.

The barrier layer 236 may be a Group III nitride and may have a bandgaplarger than that of the channel layer 234 and a smaller electronaffinity than the channel layer 234. Accordingly, in certain embodimentsof the present invention, the barrier layer 236 may include AlGaN,AlInGaN and/or AlN or combinations of layers thereof. The barrier layer236 may, for example, be from about 0.1 nm to about 30 nm thick. Incertain embodiments, the barrier layer 236 is undoped or doped with ann-type dopant to a concentration less than about 10¹⁹ cm⁻³. In someembodiments of the present invention, the barrier layer 236 isAl_(x)Ga_(1-x)N where 0<x<1. In particular embodiments, the aluminumconcentration is about 25%. However, in other embodiments of the presentinvention, the barrier layer 236 comprises AlGaN with an aluminumconcentration of between about 5% and about 100%. In specificembodiments of the present invention, the aluminum concentration isgreater than about 10%.

Due to the difference in bandgap between the barrier layer 236 and thechannel layer 234 and piezoelectric effects at the interface between thebarrier layer 236 and the channel layer 234, a two dimensional electrongas (2 DEG) is induced in the channel layer 234 at a junction betweenthe channel layer 234 and the barrier layer 236. The 2 DEG acts as ahighly conductive layer that allows conduction between the source regionof each unit cell transistor 216 and its associated drain region, wherethe source region is the portion of the semiconductor layer structure230 that is directly underneath the source finger 246 and the drainregion is the portion of the semiconductor layer structure 230 that isdirectly underneath the corresponding drain finger 254.

While semiconductor structure 230 is shown with channel layer 234 andbarrier layer 236 for purposes of illustration, semiconductor structure230 may include additional layers/structures/elements such as a bufferand/or nucleation layer(s) between channel layer 234 and substrate 232,and/or a cap layer on barrier layer 236. HEMT structures includingsubstrates, channel layers, barrier layers, and other layers arediscussed by way of example in U.S. Pat. Nos. 5,192,987, 5,296,395,6,316,793, 6,548,333, 7,544,963, 7,548,112, 7,592,211, 7,615,774,7,548,112, and 7,709,269, the disclosures of which are herebyincorporated herein in their entirety by reference. For example, an AlNbuffer layer may be formed on the upper surface of the substrate 232 toprovide an appropriate crystal structure transition between the siliconcarbide substrate 232 and the remainder of the RF transistor amplifier200. Additionally, strain balancing transition layer(s) may also and/oralternatively be provided as described, for example, in commonlyassigned U.S. Pat. No. 7,030,428, the disclosure of which isincorporated herein by reference as if set forth fully herein. Theoptional buffer/nucleation/transition layers may be deposited by MOCVD,MBE, and/or HVPE.

An interlayer insulating layer 238 is formed over the gate fingers 252,the drain fingers 254, and the source fingers 246. The interlayerinsulating layer 238 may include a dielectric material, such as SiN,SiO₂, etc.

The coupling element 270 may be on and/or coupled to the semiconductorlayer structure 230. For example, conductive patterns 273 may becoupled, respectively, between the gate connection pad 272 and the gateterminal 222, between the drain connection pad 274 and the drainterminal 224, and between the source connection pad 276 and the sourceterminal 226. In FIG. 2C, the encapsulating structure 277 of thecoupling element 270 is omitted for ease of description. The gateconnection pad 272, the drain connection pad 274, and the sourceconnection pad 276 of the coupling element 270 may extendperpendicularly to the gate fingers 252 and drain fingers 254.

By placing all of the terminals on the top side of the RF transistoramplifier die 210, the RF transistor amplifier 200 according to certainembodiments of the present invention may be able to omit vias to theback side of the RF transistor amplifier die 210. Without vias on theback side of the RF transistor amplifier die 210 connecting the sourceto the grounded electrically conductive submount, the conductivesubmount need not be electrically active. Furthermore, the back side ofthe substrate 232 of the RF transistor amplifier die 210 may bethermally coupled to a thermally conductive submount such as a heat sinkor a flange (not shown) to provide improved thermal dissipation. In someembodiments, the thermal layer 240 may facilitate this thermal coupling.When SiC is used as a substrate material, the thermal properties of thepackage can be further improved due to the improved thermal conductivityof SiC.

Moreover, the placement of all of the terminals on the top side of theRF transistor amplifier die 210, allows for the use of the couplingelement 270, which can bring all of the transistor connections torespective connection pads. This may allow the RF transistor amplifierdie 210 to be further coupled to other elements of the circuit (e.g.,other routing elements, grounding elements, harmonic and/or input/outputimpedance matching elements) through the use of connection methods thatavoid bonding wires, such as solder.

FIG. 2D illustrates an example of the connections between the varioussource fingers 246 and the source terminals 226. As illustrated in FIG.2D, each of the source fingers 246 may be coupled to a respective sourceterminal 226, but the present invention is not limited thereto. In someembodiments, the one or more source terminals 226 may be coupled to morethan one source finger 246. For example, as illustrated in FIG. 2G, insome embodiments a single source terminal 226 may be provided, and thesource terminal 226 may be connected to each of the individual sourcefingers 246. In some embodiments, multiple source terminals 226 may beprovided, each of which is connected to a plurality of source fingers246. The one or more source terminals 226 may be coupled to the sourceconnection pad 276 by conductive patterns 273 of the coupling element270.

FIG. 2E illustrates an example of the connections between the gatemanifold 242 and the gate terminal 222. As illustrated in FIG. 2E, thegate manifold 242 may be coupled to the gate terminal 222 by, forexample, a plurality of vias. FIG. 2F illustrates an example of theconnections between the drain manifold 244 and the drain terminal 224.As illustrated in FIG. 2E, the drain manifold 244 may be coupled to thedrain terminal 224 by, for example, a plurality of vias. In both FIGS.2E and 2F, the gate terminal 222 and/or drain terminal 224 may becoupled, respectively, to the gate connection pad 272 and/or the drainconnection pad 274 of the coupling element 270 by one or more conductivepatterns 273.

Though FIGS. 2C, 2E, and 2F illustrate embodiments in which the gatemanifold 242 and the gate terminal 222 are separate elements and draingate manifold 244 and the drain terminal 224 are separate elements(e.g., connected by vias), the present invention is not limited thereto.For example, FIGS. 2H-2J illustrate examples in which the gate/drainmanifold and terminal are a single element. For example, referring toFIGS. 2H and 21, a device 200′ may be configured so that the gatemanifold 242 extends to the surface of the RF transistor amplifier die210 to serve as the gate terminal 222. Similarly, FIGS. 2H and 2Jillustrate that the device 200′ may be configured so that the drainmanifold 244 extends to the surface of the RF transistor amplifier die210 to serve as the drain terminal 224.

In some embodiments, additional conductive elements and/or discretecircuit components may be formed as part of the RF transistor amplifierdie. FIG. 2K illustrates an additional embodiment of an RF transistoramplifier die 210′, according to some embodiments of the presentinvention. FIG. 2K is an embodiment illustrated from the perspective ofline 2C-2C of FIG. 2A, with modifications as described herein. Forexample, as illustrated in FIG. 2K, an RF transistor amplifier die 210′may utilize a number of conductive patterns 223 between the gatemanifold 242 and the gate terminal 222, between the drain gate manifold244 and the drain terminal 222, and/or between one or more of the sourcefingers 246 and the source terminal 246. The conductive patterns 223 maybe formed within the interlayer insulating layer 238 of the RFtransistor amplifier die 210′.

The conductive patterns 223 may be utilized to form discrete circuitelements integral to the RF transistor amplifier die 210′. For example,the conductive patterns 223 may form an RDL within the RF transistoramplifier die 210′. FIG. 2K illustrates a fan-in configuration thatcouples the gate/drain manifolds 242, 244 and the source fingers 246 tothe gate, drain, and source terminals 222, 224, 226, respectively.However, the present invention is not limited thereto. In someembodiments, the conductive patterns 223 may also be coupled to discretecircuit elements within the interlayer insulating layer 238, such as ina MMIC configuration. The use of an on-die RDL may allow for moreflexible packaging options as well as the integration of certain circuitfunctions, such as impedance matching and/or harmonic termination.

FIG. 2L illustrates that the RF transistor amplifier die 210′ may alsobe used with a coupling element 270 in an RF transistor amplifier 200″.The embodiment of FIG. 2L may include a first RDL as part of the RFtransistor amplifier die 210′ and a second RDL as part of the couplingelement 270. In some embodiments, the conductive patterns 223 of the RFtransistor amplifier die 210′ may provide one or more additionalintegrated circuits, such as impedance matching or harmonic termination,and the conductive patterns 273 of the coupling element 270 may providea fan-in, fan-out, or other configuration. In some embodiments, thecombination of the coupling element 270 and RF transistor amplifier die210′ may be enclosed in an encapsulating structure (not shown).

Though FIGS. 2A-2L illustrate a semiconductor layer structure 230 thatcomprises a HEMT it will be understood that other types of semiconductordevices may be formed in the semiconductor layer structure 230 withoutdeviating from the present invention. For example, the semiconductorlayer structure 230 may include a MOSFET, a DMOS transistor, a MESFET,and/or an LDMOS transistor. One of ordinary skill in the art willrecognize that the arrangement of all of the source/drain/gate contactson a single side of the semiconductor layer structure 230, including theuse of the coupling element 270, may allow for improved connectionpossibilities and better thermal performance.

By placing gate, drain, and source contacts on a same side of the RFtransistor amplifier 200, connection options may be available that werenot previously possible. These connection options may also allow forembodiments that can more strongly leverage the improved thermalconductivity of SiC materials.

FIG. 3A is a schematic cross-sectional view of the RF transistoramplifier 200 coupled to a circuitry module 310, according to someembodiments of the present invention. FIG. 3A includes elements of theRF transistor amplifier 200 that have been previously discussed. Assuch, the discussion of FIG. 3A will focus on those portions of theembodiments that are different from those discussed with respect to theprior figures.

Referring to FIG. 3A, the circuitry module 310 may be configured tocouple to the gate connection pad 272, the drain connection pad 274, andthe source connection pad 276 of the coupling element 270. For example,the circuitry module 310 may expose interconnection pads 322, 324, 326that may be configured to be coupled to the gate connection pad 272, thedrain connection pad 274, and the source connection pad 276. Forexample, the first interconnection pad 322 may be configured to coupleto the gate connection pad 272, the second interconnection pad 324 maybe configured to couple to the drain connection pad 274, and the thirdinterconnection pad 326 may be configured to couple to the sourceconnection pad 276. In some embodiments, a bonding element (e.g., solderballs and/or bumps 320) may be used to respectively couple the first,second, and third interconnection pads 322, 324, 326 to the gateconnection pad 272, the drain connection pad 274, and the sourceconnection pad 276. Though illustrated as a single pad, in someembodiments, one or more of the first, second, and/or thirdinterconnection pads 322, 324, 326 may include a plurality of pads.

Each of the first, second, and third interconnection pads 322, 324, 326may be coupled to one or more conductive patterns 373 within thecircuitry module 310. The conductive patterns 373 may provide variousrouting and/or circuitry within the circuitry module 310. For example,the conductive patterns 373 may connect the first interconnection pad322 to one or more first surface connection pads 372 and one or moregate lead connection pads 382. Thus, the gate connection pad 272 may beelectrically coupled to the one or more first surface connection pads372 and the one or more gate lead connection pads 382. The conductivepatterns 373 may also connect the second interconnection pad 324 to oneor more second surface connection pads 374 and one or more drain leadconnection pads 384. Thus, the drain connection pad 274 may beelectrically coupled to the one or more second surface connection pads374 and the one or more drain lead connection pads 384. The conductivepatterns 373 may also connect the third interconnection pad 326 to oneor more third surface connection pads 376 and one or more source leadconnection pads 386. Thus, the source connection pad 276 may beelectrically coupled to the one or more third surface connection pads376 and the one or more source lead connection pads 386. Thus, thecircuitry module 310 may have a surface (e.g., a top surface) having aplurality of first surface connection pads 372, respective ones of whichare coupled to the gate connection pad 272 of the coupling element 270,a plurality of second surface connection pads 374, respective ones ofwhich are coupled to the drain connection pad 274 of the couplingelement 270, and a plurality of third surface connection pads 376,respective ones of which are coupled to the source connection pad 276 ofthe coupling element 270.

The conductive patterns 373 may be encased in an isolation material 315.In some embodiments, the isolation material 315 may include, forexample, silicon oxide, silicon nitride, an oxide of the conductivepatterns 273, a polymer, a molding compound, or a combination thereof.In some embodiments, circuitry module 310 may be formed as a printedcircuit board (PCB). In a PCB embodiment, the isolation material 315 maybe the substrate of the PCB, and the conductive patterns 373 may betraces formed within the substrate.

The presence of the conductive patterns 373 and the first, second, andthird surface connection pads 372, 374, 376 may allow for a number ofdifferent circuits to be coupled to the RF transistor amplifier 200. Forexample, circuit elements 350 may be coupled (e.g., via solder or otherbonding) between two or more of the first, second, and third surfaceconnection pads 372, 374, 376. The circuit elements 350 may providevarious electronic capabilities to the RF transistor amplifier 200. Forexample, the circuit elements 350 may comprise impedances (including,for example, resistive, inductive, and capacitive elements) that may beused for impedance matching and/or harmonic termination. In someembodiments, the circuit elements 350 may provide stripline componentsand/or baseband termination to the RF transistor amplifier 200.

Though illustrated as being on the surface of the circuitry module 310,it will be understood that additional circuit elements 350 may beprovided internally within the circuitry module 310. For example, one ormore ground planes may be formed as a circuit element 350 within thecircuitry module 310. Similarly, a stripline may be formed within thecircuitry module 310 (e.g., in conjunction with one or more groundplanes). The configuration of the conductive patterns 373 and thecircuit elements 350 illustrated in FIG. 3A are merely examples and arenot intended to limit embodiments of the present invention. In someembodiments, the circuit elements 350 and/or the conductive patterns 373may be configured to provide at least part of harmonic terminatingcircuitry, matching circuitry, splitting circuitry, combining circuitry,and/or biasing circuitry. Other configurations of the conductivepatterns 373 and/or other types of circuit elements 350 may be usedwithout deviating from the scope of the present invention.

In some embodiments, the circuitry module 310 and the circuit elements350 may be optionally encased within an encapsulating material 316. Insome embodiments, the encapsulating material 316 may include, forexample, silicon oxide, silicon nitride, a polymer, a molding compound,or a combination thereof.

The gate lead connection pads 382, drain lead connection pads 384, andsource lead connection pads 386 may provide terminals to connect signalsto the respective gate, drain, and source of the RF transistor amplifier200. For example, a connection for providing an input signal to the RFtransistor amplifier 200 may be coupled to one or more of the gate leadconnection pads 382. In some embodiments, a connection for receiving anoutput signal from the RF transistor amplifier 200 may be coupled to thedrain lead connection pads 384. In some embodiments, a ground signal maybe coupled to the source lead connection pads 386, though the presentinvention is not limited thereto. Though the gate lead connection pads382, drain lead connection pads 384, and source lead connection pads 386are illustrated as being at a bottom surface of the circuitry module310, this is merely an example and not intended to limit the presentinvention. In some embodiments, the various lead connections may be on atop or other surface of the circuitry module 310.

The use of the circuitry module 310 in conjunction with the top-sidecontacts of the RF transistor amplifier 200 allows for additionalfunctionality, such as impedance matching and/or harmonic termination,to be conveniently added to the RF transistor amplifier 200 without theuse of extensive wire bonding. Thus, different functionality and/orcapability may be coupled to an RF transistor amplifier 200 simply byusing a different circuitry module 310. Because the connection points(e.g., the terminals) of the RF transistor amplifier 200 are consistent,variations in the configuration of the RF transistor amplifier 200 maybe accomplished more efficiently than previously available. The reducedor eliminated need for wire bonds may also allow for reduced die size insome applications (where the sizes of the wire bond pads drive diesize), and hence the RF transistor amplifier dies according toembodiments of the present invention may also exhibit increasedintegration density. Thus, the RF amplifier die according to embodimentsof the present invention may exhibit improved product assemblyconsistency, higher yields, increased product integration, reduced cost,and improved RF performance, especially for products operating at highfrequencies such as millimeter wave frequencies.

The techniques disclosed herein may be particularly beneficial in higherfrequency applications as the inductance required in the matchingcircuits may be much lower in such applications, and hence the use oftraditional bond wires may inject too much inductance. Additionally, thetolerances in the bond wire lengths may have a larger impact at higherfrequencies, and in high frequency applications (particularly if lowerpower) the size of the bond pads may drive the size of the die. In someembodiments, any of the RF transistor amplifier dies disclosed hereinmay be configured to operate at frequencies greater than 1 GHz. In otherembodiments, these RF transistor amplifier dies may be configured tooperate at frequencies greater than 2.5 GHz. In still other embodiments,these RF transistor amplifier dies may be configured to operate atfrequencies greater than 3.1 GHz. In yet additional embodiments, theseRF transistor amplifier dies may be configured to operate at frequenciesgreater than 5 GHz. In some embodiments, these RF transistor amplifierdies may be configured to operate in at least one of the 2.5-2.7 GHz,3.4-4.2 GHz or 5.1-5.8 GHz frequency bands or sub-portions thereof.

FIG. 3B is a schematic cross-sectional view of an RF transistoramplifier die 210 coupled to a circuitry module 310, according to someembodiments of the present invention. FIG. 3B includes elements of thecircuitry module 310, circuit elements 350, and RF transistor amplifierdie 210 that have been previously discussed. As such, the discussion ofFIG. 3B will focus on those portions of the embodiments that aredifferent from those discussed with respect to the prior figures.

FIG. 3B illustrates an embodiment in which the circuitry module 310 isdirectly connected to the RF transistor amplifier die 210 without anintervening coupling element 270. Thus, the circuitry module 310 may beconfigured to couple to the gate terminal 222, the drain terminal 224,and one or more of the source terminal(s) 226 of the RF transistoramplifier die 210. For example, the first interconnection pad 322 of thecircuitry module 310 may be configured to couple to the gate terminal222, the second interconnection pad 324 of the circuitry module 310 maybe configured to couple to the drain terminal 224, and the thirdinterconnection pad 326 of the circuitry module 310 may be configured tocouple to one or more of the source terminal(s) 226. In someembodiments, a bonding element (e.g., solder balls and/or bumps) 320 maybe used to respectively couple the first, second, and thirdinterconnection pads 322, 324, 326 to the gate terminal 222, the drainterminal 224, and one or more of the source terminal(s) 226. Thoughillustrated as a single pad, in some embodiments, one or more of thefirst, second, and/or third interconnection pads 322, 324, 326 mayinclude a plurality of pads. The configuration illustrated in FIG. 3Bmay be useful when a fan-in or fan-out configuration of a couplingelement 270 is not needed to provide a connection between the RFtransistor amplifier die 210 and the circuitry module 310.

FIG. 3C illustrates an embodiment in which the circuitry module 310 isdirectly connected to an RF transistor amplifier die 210′ thatincorporates an on-die RDL utilizing conductive patterns 223 without anintervening coupling element 270. Thus, the circuitry module 310 may beconfigured to couple to the gate terminal 222, the drain terminal 224,and one or more of the source terminal(s) 226 of the RF transistoramplifier die 210′. The RF transistor amplifier die 210′ of FIG. 3C isillustrated in cross-section to show an example of the internalconductive patterns (e.g., of an RDL) coupled to the gate terminal 222,the drain terminal 224, and one or more of the source terminal(s) 226.In some embodiments, the RF transistor amplifier die 210′ may be a MMIC.Though illustrated without a coupling element 270, it will be understoodthat, in some embodiments, the coupling element 270 may also be presentbetween the RF transistor amplifier die 210′ and the circuitry module310.

The use of the coupling element 270 utilizing conductive patterns 273(if present), the on-die RDL utilizing conductive patterns 223 (ifpresent), and/or the circuitry module 310 utilizing conductive patterns373 may provide an interconnect structure between the gate, drain, andsource of the RF transistor amplifier die 210 and the gate leadconnection pads 382, drain lead connection pads 384, and source leadconnection pads 386. By utilizing various combinations of these elementand electric bonding techniques, a semiconductor package may be providedthat eliminates and/or reduces wire bonding.

FIG. 3D is a schematic cross-sectional view of a circuitry module 310′coupled to a plurality of RF transistor amplifiers 200, according tosome embodiments of the present invention. FIG. 3E is a schematiccross-sectional view of a circuitry module 310′ coupled to a pluralityof RF transistor amplifier dies 210, according to some embodiments ofthe present invention. FIGS. 3E and 3E include elements of a circuitrymodule 310′, circuit elements 350, RF transistor amplifier dies 210, andRF transistor amplifiers 200 that have been previously discussed. Assuch, the discussion of FIGS. 3D and 3E will focus on those portions ofthe embodiments that are different from those discussed with respect tothe prior figures.

Referring to FIG. 3D, the circuitry module 310′ may be configured tocouple to more than one RF transistor amplifier 200. FIG. 3D alsoillustrates that the conductive patterns 373, interconnection pads, andsurface connection pads may be modified without deviating from the scopeof the invention. For example, the circuitry module 310′ may include aplurality of interconnection pads 327. The interconnection pads 327 maybe configured to couple to terminals of the plurality of RF transistoramplifiers 200. For example, an interconnection pad 327 of the circuitrymodule 310′ may be configured to couple to a gate connection pad 272, adrain connection pad 274, and/or a source connection pad 276 of one ormore of the plurality of RF transistor amplifiers 200.

Similarly, the circuitry module 310′ may have surface connection pads377 coupled to one or more of the interconnection pads 327 viaconductive patterns 373. Circuit elements 350 may be coupled to one ormore of the surface connection pads 377. By using the conductivepatterns 373, interconnection pads 327, surface connection pads 377,and/or circuit elements 350, various circuit connections between theplurality of RF transistor amplifiers 200 may be realized. It will beunderstood that the configuration illustrated in FIG. 3D is merely aschematic example, and that the routing and connections of the variouselements of the circuitry module 310′ may be variously modified togenerate complex circuits involving the RF transistor amplifiers 200.

In some embodiments, the circuitry module 310′ may include one or moregate lead connection pads 382, one or more drain lead connection pads384, and one or more source lead connection pads 386. Signals providedto the one or more gate lead connection pads 382, one or more drain leadconnection pads 384, and one or more source lead connection pads 386 maybe distributed through the circuitry module 310′ to various ones of theRF transistor amplifiers 200 via the conductive patterns 373.

Though FIG. 3D illustrates an embodiment in which each one of theplurality of RF transistor amplifiers 200 has its own coupling element270, it will be understood that other configurations are possible. Forexample, in some embodiments, a single coupling element 270 may becoupled to a plurality of RF transistor amplifier dies 210. The use of asingle coupling element 270 may allow for the use of a circuitry module310′ having fewer interconnections to the transistor elements of thecircuit.

FIG. 3D illustrates an embodiment in which the circuitry module 310′ iscoupled to a plurality of RF transistor amplifiers 200 that includecoupling element 270. However, the present invention is not limitedthereto. In some embodiments, the circuitry module 310′ may be directlycoupled to a plurality of RF transistor amplifier dies 210, 210′ that donot include a coupling element 270. FIG. 3E illustrates an embodiment inwhich the circuitry module 310′ is coupled to a plurality of RFtransistor amplifier dies 210. It will be understood that the circuitrymodule 310′ may also be coupled to a plurality of RF transistoramplifier dies 210′ (e.g., as illustrated in FIG. 2K) without deviatingfrom the present invention. The circuitry module 310′ may be coupled tothe RF transistor amplifier die 210, 210′ by, for example, bondingelement (e.g., solder ball and/or bump) 320. It will be understood thatthe circuitry module 310 may be coupled to a combination of RFtransistor amplifiers 200 that include coupling element 270 and RFtransistor amplifier dies 210, 210′.

The circuitry module 310′ may be used, for example, to provideinterconnections to the RF transistor amplifiers 200 that may be used toimplement a multistage and/or multipath amplifier circuit, such as aDoherty amplifier. The conductive patterns 373 may provide theelectrical connections of the multistage and/or multipath amplifiercircuit, which may be coupled to ones of the circuit elements 350 toprovide capacitors, inductors, resistors, and/or other circuit elementsused in the multistage and/or multipath amplifier circuit. Thus, thecircuitry module 310′ may be configured to provide modularinterconnections that can be easily coupled to a plurality of RFtransistor amplifiers without the use of bond wires.

Though FIGS. 3A to 3E illustrate various combinations of circuitrymodules 310, 310′, coupling elements 270, and RF transistor amplifierdies 210, 210′, it will be understood that the present invention is notlimited to the specific combinations illustrated in those figures. Aswill be understood by one of ordinary skill in the art, the of circuitrymodules 310, 310′, coupling elements 270, and RF transistor amplifierdies 210, 210′ may be combined in multiple variations, including thosenot specifically illustrated, without deviating from the presentinvention. For example, embodiments of the present invention include thetransistor amplifier die 210, 210′ directly coupled to the circuitrymodule 310, 310′. Some embodiments of the present invention include thetransistor amplifier die 210, 210′ coupled to the circuitry module 310,310′ via a coupling element 270. The coupling element 270 and/or thecircuitry module 310, 310′ may include PCB or metal core PCB as well astraces on a patterned dielectric material. In some embodiments, thetransistor amplifier die 210′ may have conductive patterns such as anRDL at the die level, which may include a fan-in and/or fan-outconfiguration that may be connected to other structures, such as thecoupling element 270 or circuitry module 310, 310′.

FIG. 4A is a schematic cross-sectional view of the RF transistoramplifier 200 and circuitry module 310 coupled to a carrier substrate410, according to some embodiments of the present invention. FIG. 4B isa schematic cross-sectional view of the RF transistor amplifier 200coupled to the carrier substrate 410 without a coupling element 270,according to some embodiments of the present invention. FIGS. 4A and 4Binclude elements of the RF transistor amplifier 200, coupling element270, and circuitry module 310 that have been previously discussed. Assuch, the discussion of FIGS. 4A and 4B will focus on those portions ofthe embodiments that are different from those discussed with respect tothe prior figures.

Referring to FIG. 4A, the RF transistor amplifier 200 may be placed upona carrier substrate 410. The carrier substrate 410 may comprise anystructure that provides a suitable mounting surface for the RFtransistor amplifier 200. In some embodiments, the carrier substrate 410may comprise a temperature conductive element such a metal flange. Insome embodiments, the carrier substrate 410 may comprise, for example,an RDL laminate structure or a PCB. In some embodiments, the carriersubstrate 410 may include copper, molybdenum, and/or combinationsthereof. In some embodiments, the carrier substrate 410 may be composedof multiple layers and/or contain vias/interconnections. The carriersubstrate 410 may be configured to allow the RF transistor amplifier 200to be easily packaged. As illustrated in FIG. 4A, a circuitry module 310may be coupled to the RF transistor amplifier 200 as discussed herein.

In some embodiments, the thermal layer 240 may be placed between thebottom surface of the RF transistor amplifier 200 and the carriersubstrate 410. The thermal layer 240 may assist in the transfer ofthermal energy from the RF transistor amplifier 200 to the carriersubstrate 410. In embodiments in which SiC is utilized as part of the RFtransistor amplifier 200, the excellent thermal conductivity of SiC mayallow for the carrier substrate 410 to more efficiently dissipate heatof the device. In some embodiments, the thermal layer 240 may include,or be replaced by, a eutectic layer.

One or more leads 415 may be coupled to the one or more gate leadconnection pads 382, one or more drain lead connection pads 384, and oneor more source lead connection pads 386 of the circuitry module 310. Forexample, a first input lead 415A may be coupled to the one or more gatelead connection pads 382 (e.g., via bonding layer 420A, such as solder)to provide an input signal to the RF transistor amplifier 200, and asecond output lead 415B may be coupled to the one or more drain leadconnection pads 384 (e.g., via bonding layer 420B, such as solder) toreceive an output signal from the RF transistor amplifier 200, thoughthe present invention is not limited thereto.

The lead connections of FIG. 4A are merely an example and otherconnection and/or connection pads are possible. For example, in FIG. 4Athe one or more source lead connection pads 386 are illustrated as beingconnected to both of the leads 415A and 415B. However, in someembodiments, the one or more source lead connection pads 386 may not becoupled to the source of the RF transistor amplifier 200 (e.g., throughthe one or more source terminal(s) 226). For example, in someembodiments, one or more of the circuit elements 350 and/or conductivepatterns 373 may be configured to control whether the one or more sourcelead connection pads 386 are coupled to an input lead 415A, an outputlead 415B, or neither. For example, a circuit element 350 may beprovided on the circuitry module 310 to connect the source terminal 226of the RF transistor amplifier 200 to a lead 415. Similarly, thecircuitry module 310 may be configured to allow the removal of a circuitelement 350 (e.g., a resistor) to disconnect a coupling between a lead415A or 415B and the source terminal 226 of the RF transistor amplifier200.

In addition, though FIG. 4A illustrates an embodiment in which there aretwo leads 415A and 415B, this is merely an example and not intended tolimit the invention. In some embodiments, multiple leads may beprovided, respective ones of which are coupled to the gate leadconnection pads 382, drain lead connection pads 384, source leadconnection pads 386, and/or combinations thereof. For example, in someembodiments, an additional lead may be provided that is configured toprovide a ground connection to the source lead connection pads 386. Insome embodiments, the source lead connections pads 386 may be configuredto couple, for example, to a lead of an RF semiconductor package, whichmay be coupled to ground. As used herein, the combination of the RFtransistor amplifier 200, the circuitry module 310, the leads 415A,415B, and the carrier substrate 410 may be referred to as a packaged RFtransistor amplifier, an RF transistor amplifier package, or simply anRF transistor amplifier.

The leads 415A, 415B may be between the circuitry module 310 and thecarrier substrate 410, but the present invention is not limited thereto.In some embodiments, the carrier substrate 410 may have pedestals 410 pthat are under and, in some embodiments, supporting the leads 415A and415B, though the present invention is not limited thereto. In someembodiments, the pedestals 410 p may include an insulating materialand/or may be separated from the leads 415A, 415B by an insulating layer460. In some embodiments, as will be discussed further herein, the leads415A, 415B may be supported by a portion of the package of the RFtransistor amplifier 200.

Though FIG. 4A illustrates the use of coupling element 270, the presentinvention is not limited thereto. FIG. 4B illustrates an embodiment inwhich the coupling element is omitted. In the embodiment of FIG. 4B, thecircuitry module 310 may have first, second, and third interconnectionpads 322, 324, 326 that are spaced apart from one another at distancessimilar to those of the gate terminal 222, drain terminal 224, and oneor more source terminal(s) 226. For example, the first interconnectionpad 322 may be connected (e.g., via a bonding elements such as solderball and/or bump 320) to the gate terminal 222, the secondinterconnection pad 324 may be connected to the drain terminal 224, andthe third interconnection pad 326 may be connected to the sourceterminal 226. The direct connection to the circuitry module 310 may beuseful when an adjustment to the spacing (e.g., via a fan-in or fan-outstructure) of the terminals of the RF transistor amplifier 200 is notneeded. Thus, in some embodiments, the coupling element 270 is optionalin the RF transistor amplifier 200.

FIG. 4C illustrates an embodiment in which a plurality of RF transistoramplifiers 200 are coupled to a circuitry module 310′ and placed on acarrier substrate 410. For example, as discussed herein with respect toFIGS. 3D and 3E, a plurality of RF transistor amplifier dies 210, 210′may be coupled to a circuitry module 310′. The plurality of RFtransistor amplifier dies 210, 210′ may be coupled to the circuitrymodule 310′ via a coupling element 270 or directly to the circuitrymodule 310′ (as illustrated in FIG. 3E. The RF transistor amplifier dies210, 210′ and/or the circuitry module 310′ may be further placed on acarrier substrate 410, with leads 415A and 415B coupled thereto. In someembodiments, a thermal layer 240 may be placed between the RF transistoramplifier dies 210, 210′ and the carrier substrate 410.

Though FIGS. 4A to 4C illustrate various combinations of circuitrymodules 310, 310′, coupling elements 270, and RF transistor amplifierdies 210, 210′, it will be understood that the present invention is notlimited to the specific combinations illustrated in those figures. Aswill be understood by one of ordinary skill in the art, the of circuitrymodules 310, 310′, coupling elements 270, and RF transistor amplifierdies 210, 210′ may be combined in multiple variations, including thosenot specifically illustrated, without deviating from the presentinvention. Each of these combinations may be placed on a carriersubstrate 410, as generally illustrated in FIGS. 4A to 4C, withappropriate leads (e.g., leads 415A, 415B) connected thereto.

FIGS. 5A to 5C are schematic cross-sectional views of various packagingoptions 500 a, 500 b, 500 c of the RF transistor amplifier 200,according to some embodiments of the present invention. FIGS. 5A to 5Cinclude elements of the RF transistor amplifier 200, coupling element270, and circuitry module 310 that have been previously discussed. Assuch, the discussion of FIGS. 5A to 5C will focus on those portions ofthe embodiments that are different from those discussed with respect tothe prior figures.

Referring to FIG. 5A, a semiconductor package 500 a may incorporate theRF transistor amplifier 200 according to some embodiments of the presentinvention. The semiconductor package 500 a may be, for example, anopen-air or open-cavity package. The semiconductor package 500 a mayinclude a carrier substrate 410, sidewalls 520, and a lid 525. Thecarrier substrate 410, sidewalls 520, and lid 525 may define an internalcavity 530. The RF transistor amplifier 200 and circuitry module 310 maybe disposed inside the internal cavity 530. The term “semiconductorpackage” is not intended to be limiting. As previously noted, thecombination of the RF transistor amplifier 200, the circuitry module310, the leads 415A, 415B, and the carrier substrate 410 may be referredto as a packaged RF transistor amplifier, a semiconductor package, orsimply an RF transistor amplifier.

The carrier substrate 410 may include materials configured to assistwith the thermal management of the semiconductor package 500 a. Forexample, the carrier substrate 410 may include copper and/or molybdenum.In some embodiments, the carrier substrate 410 may be composed ofmultiple layers and/or contain vias/interconnections. In an exampleembodiment, the carrier substrate 410 may be a multilayercopper/molybdenum/copper metal flange that comprises a core molybdenumlayer with copper cladding layers on either major surface thereof. Theprovided examples of the materials of the carrier substrate 410 are notintended to limit the present invention. In some embodiments, a thermallayer 240 may be between the RF transistor amplifier 200 and the carriersubstrate 410.

The sidewalls 520 and/or lid 525 may be formed of or include aninsulating material in some embodiments. For example, the sidewalls 520and/or lid 525 may be formed of or include ceramic and/or a PCB. In someembodiments, the sidewalls 520 and/or lid 525 may be formed of, forexample, Al₂O₃. The lid 525 may be glued to the sidewalls 520 using anepoxy glue. The sidewalls 520 may be attached to the carrier substrate410 via, for example, brazing. The leads 415A, 415B may be configured toextend through the sidewalls 520, though the present invention is notlimited thereto.

In some embodiments, the RF transistor amplifier 200 may be disposed onthe carrier substrate 410 and the leads 415A, 415B, and the circuitrymodule 310 may be disposed on the RF transistor amplifier 200. The leads415A, 415B may be coupled to the circuitry module 310 using, forexample, a conductive die attach material. In some embodiments, theleads 415A, 415B may extend from the sidewalls 520 to contact thecircuitry module 310. As such, in some embodiments, the use of wirebonds to connect the RF transistor amplifier 200 to leads 415A, 415B maybe avoided and/or reduced.

Additional circuit elements 350 are mounted on the circuitry module 310.These additional components may include, for example, input matchingcomponents and output matching components that are used to impedancematch at the fundamental frequency and/or to terminate intermodulationproducts to ground. These circuit elements 350 may be passive RFcomponents that include resistors, capacitors and/or inductors that areimplemented (at least partially) in integrated passive devices orprinted circuit boards, for example. Leads 415A, 415B allow the RFtransistor amplifier 200 to be connected to externaldevices/circuits/power sources. In the depicted embodiment, circuitrymodule 310 is used to connect the conductive leads 415A, 415B to circuitelements 350 on the circuitry module 310. An RF signal input to the RFtransistor amplifier 200 on a first lead 415A may be passed through thecircuitry module 310 to circuit elements 350 and from there to a gateterminal 222 of the RF transistor amplifier die 210, and the amplifiedoutput RF signal may be passed from the drain terminal 224 of the RFtransistor amplifier die 210 to the circuit elements 350 and from therethrough the circuitry module 310 where the RF signal is output throughlead 415B.

Referring to FIG. 5B, a semiconductor package 500 b may incorporate theRF transistor amplifier 200 according to embodiments of the presentinvention. The semiconductor package 500 b may be, for example, anovermolded plastic (OMP) package. The semiconductor package 500 b mayinclude a carrier substrate 410 upon which the RF transistor amplifier200 is disposed. The circuitry module 310 may be disposed on the RFtransistor amplifier 200.

The RF transistor amplifier 200 and the circuitry module 310 may beencased in an overmold material 540. The overmold material 540 may beformed of a plastic or a plastic polymer compound, which is injectionmolded around RF transistor amplifier 200 and/or the circuitry module310, thereby providing protection from the outside environment.

Methods of manufacturing an OMP semiconductor package 500 b that may bemodified to incorporate the RF transistor amplifier 200 and/or thecircuitry module 310 are described in U.S. Pat. No. 9,515,011 entitled“Over-mold plastic packaged wide band-gap power transistors and MMICS,”to Wood et al., issued Dec. 6, 2016, the disclosure of which isincorporated herein by reference as if set forth fully herein. In thesemiconductor package 500 b according to the present invention, leads415A, 415B may extend from outside the semiconductor package 500 b andinto the overmold material 540 so as to connect to the circuitry module310. As such, in some embodiments, the use of wire bonds to connect theRF transistor amplifier 200 to leads 415A, 415B may be avoided and/orreduced.

As in semiconductor package 500 a, the carrier substrate 410 ofsemiconductor package 500 b may include materials configured to assistwith thermal management. For example, the carrier substrate 410 mayinclude copper and/or molybdenum. In some embodiments, the carriersubstrate 410 may be composed of multiple layers and/or containvias/interconnections. In some embodiments, the carrier substrate 410may include a metal heat sink that is part of a lead frame or metal slugthat is at least partially surrounded by a plastic overmold 540. Theprovided examples of the materials of the carrier substrate 410 are notintended to limit the present invention. In some embodiments, a thermallayer 240 may be between the RF transistor amplifier 200 and the carriersubstrate 410.

FIG. 5C is a schematic cross-sectional view of a packaged RF transistoramplifier 500 c that includes an RF transistor amplifier die in aprinted circuit board based package. The packaged RF transistoramplifier 500 c is very similar to the packaged RF transistor amplifier500 a discussed above with reference to FIG. 5A except that the leads415A, 415B of packaged RF transistor amplifier 500 c are replaced with aprinted circuit board 522 that includes traces 415A, 415B that act asthe input and output leads. The printed circuit board 522 may beattached to the carrier substrate 410 via, for example, a conductiveglue. The carrier substrate 410 may include, for example, pedestals410P. The pedestals 410P may be constructed of an insulating materialand/or a metal. The printed circuit board 652 may include a centralopening and the circuitry module 310 is mounted within this opening onthe carrier substrate (e.g., metal flange) 410. The RF transistoramplifier 200 and the circuit elements 350 are mounted on the circuitrymodule 310.

Though FIGS. 5A to 5C illustrate the use of an RF transistor amplifier200 having a coupling element 270, the present invention is not limitedthereto. In some embodiments, the semiconductor packages 500 a, 500 b,500 c may be configured to include a circuitry module 310 that isdirectly coupled to the RF transistor amplifier die 210 as illustratedwithin FIGS. 3B, 3C, and 4B. In some embodiments, the semiconductorpackages 500 a, 550 b, and 500 c may be configured to include acircuitry module 310 that is coupled to a plurality of RF transistoramplifiers 200, 200′ and/or a plurality of RF transistor amplifier dies210, 210 as illustrated in FIGS. 3D, 3E, and 4C.

It will be appreciated that any of the RF transistor amplifiersaccording to embodiments of the present invention that are discussedherein may be mounted in packages such as the packages shown in FIGS. 5Athrough 5C. Thus, the RF transistor amplifier die 210, coupling element270, and/or circuitry modules 310 shown in FIGS. 5A-5C, may be replacedwith the RF transistor amplifier die 210,210′, coupling element 270,and/or circuitry modules 310, 310′ according to any of the embodimentsof the present invention that are discussed herein to provide manyfurther embodiments of packaged RF transistor amplifiers. Depending onthe embodiment, the packaged RF transistor amplifier can include amonolithic microwave integrated circuit (MMIC) as the RF transistoramplifier die where the RF transistor amplifier die incorporatesmultiple discrete circuits in a single integrated die. Additionallyand/or alternatively, the package can comprise multiple RF transistoramplifier die in a path that are connected in series to form a multiplestage RF transistor amplifier and/or multiple RF transistor amplifierdie that are disposed in multiple paths (e.g., in parallel) to form anRF transistor amplifier with multiple transistor amplifier die andmultiple paths, such as in a Doherty amplifier configuration. In someembodiments, the packaged RF transistor amplifier may include RFtransistor amplifier die according to embodiments of the presentinvention that have conducive gate and/or conductive drain vias thatprovide electrical connections to a back side interconnection structureas well as traditional RF transistor amplifier die that have gate anddrain terminals that are connected to other structures via wire bonds.

Though in some embodiments described herein, circuit elements 350 may beplaced on a top surface of the circuitry module 310, the embodimentsdescribed herein are not limited thereto. FIGS. 6A to 6C are schematiccross-sectional views of additional embodiments of an RF transistoramplifier 200 coupled to a circuitry module 610, according to someembodiments of the present invention. FIGS. 6A to 6C correspond to thecross-section of FIG. 3A. FIGS. 6A to 6C include elements of the RFtransistor amplifier 200 that have been previously discussed. As such,the discussion of FIGS. 6A to 6C will focus on those portions of theembodiments that are different from those discussed with respect to theprior figures.

Referring to FIG. 6A, the circuitry module 610 may be configured tocouple to the gate connection pad 272, the drain connection pad 274, andthe source connection pad 276 of the coupling element 270. The couplingelement 270 may be coupled to RF transistor amplifier die 210, asdiscussed herein with respect to, for example, FIGS. 2A to 2L.

For example, the circuitry module 610 may have exposed interconnectionpads 622, 624, 626 that may be configured to be coupled to the gateconnection pad 272, the drain connection pad 274, and the sourceconnection pad 276, respectively. In some embodiments, a bonding element(e.g., solder balls and/or bumps 320) may be used to respectively couplethe first, second, and third interconnection pads 622, 624, 626 to thegate connection pad 272, the drain connection pad 274, and the sourceconnection pad 276. Though illustrated as a single pad, in someembodiments, one or more of the first, second, and/or thirdinterconnection pads 622, 624, 626 may include a plurality of pads.

The circuitry module 610 may be coupled to the coupling element 270 on afirst side 601 of the circuitry module 610. On a second side 602 of thecircuitry module 610 that is opposite the first side 601, a plurality ofpads may be exposed. For example, a gate lead 682, a drain lead 684, anda source lead 686 may be exposed on the second side 602 of the circuitrymodule 610. Though only a single gate lead 682, drain lead 684, andsource lead 686 are illustrated in FIG. 6A, it will be understood that aplurality of each type of lead may be provided. As will be discussedfurther herein, the gate lead 682, the drain lead 684, and the sourcelead 686 may be configured to be respectively coupled to the gateterminal 222, the drain terminal 224, and the source terminal 226 of theRF transistor amplifier die 210. An encapsulating material 625 may be onsurfaces of the RF transistor amplifier die 210, the coupling element270, and/or the circuitry module 610. The encapsulating material 625 maybe formed of a plastic or a plastic polymer compound, but the presentinvention is not limited thereto. In some embodiments, the encapsulatingmaterial 625 may be or include a polymer with fillers.

Each of the first, second, and third interconnection pads 622, 624, 626may be coupled to one or more conductive patterns 673 within thecircuitry module 610. The conductive patterns 673 may provide variousrouting and/or circuitry within the circuitry module 610. For example,the conductive patterns 673 may connect the first interconnection pad622 to one or more first surface connection pads 672 and the gate lead682. In some embodiments, the first surface connection pads 672 may beexposed on the first side 601 of the circuitry module 610. In someembodiments, a first circuit element 650 a may be coupled to one or moreof the first surface connection pads 672 so as to be electricallycoupled between the gate lead 682 and the first interconnection pad 622.In some embodiments, the first circuit element 650 a may be coupledbetween the gate lead 682 and the gate terminal 222 of the RF transistoramplifier die 210 (e.g., through the coupling element 270).Consequently, the first circuit element 650 a may be electricallycoupled between gates of the RF transistor amplifier die 210 and thegate lead 682. In some embodiments, the first circuit element 650 a maybe coupled to the first side 601 of the circuitry module 610. Thus, thefirst circuit element 650 a may be coupled to a same side (e.g., thefirst side 601) of the circuitry module 610 as the coupling element 270.

Similarly, the conductive patterns 673 may connect the secondinterconnection pad 624 to one or more second surface connection pads674 and the drain lead 684. In some embodiments, a second circuitelement 650 b may be coupled to one or more of the second surfaceconnection pads 674 so as to be electrically coupled between the drainlead 684 and the second interconnection pad 624. In some embodiments,the second surface connection pads 674 may be exposed on the first side601 of the circuitry module 610. In some embodiments, the second circuitelement 650 b may be coupled between the drain lead 684 and the drainterminal 224 of the RF transistor amplifier die 210 (e.g., through thecoupling element 270). Consequently, the second circuit element 650 bmay be electrically coupled between drains of the RF transistoramplifier die 210 and the drain lead 684.

The first circuit element 650 a and/or the second circuit element 650 bmay provide various electronic capabilities to the RF transistoramplifier 200. For example, the first circuit element 650 a and/or thesecond circuit element 650 b may comprise impedances (including, forexample, resistive, inductive, and capacitive elements) that may be usedfor impedance matching and/or harmonic termination. In some embodiments,the first circuit element 650 a and/or the second circuit element 650 bmay be or include surface mount devices. In some embodiments, the firstcircuit element 650 a and/or the second circuit element 650 b may be orinclude integrated passive devices (IPDs). In some embodiments, thefirst circuit element 650 a and/or the second circuit element 650 b maybe or include harmonic and/or input/output impedance matching elements.

For example, the first circuit element 650 a may be configured toprovide input matching capabilities. Due to its location between thegate lead 682 and the RF transistor amplifier die 210, the first circuitelement 650 a may be capable of affecting and/or conditioning a signalprovided to the gates of the RF transistor amplifier die 210. Similarly,the second circuit element 650 b may be configured to provide outputmatching capabilities. Due to its location between the drain lead 684and the RF transistor amplifier die 210, the second circuit element 650b may be capable of affecting and/or conditioning a signal provided fromthe drains of the RF transistor amplifier die 210.

By using the circuitry module 610 with the exposed connection pads, suchas the first and second surface connection pads 672, 674, surface mountdevices can be used to provide circuit elements that may be coupled tothe RF transistor amplifier die 210. The surface mount devices can bereplaced and/or configured as necessary to provide a more flexiblesolution. For example, when a different type of input/output matchingand/or harmonic termination is needed, the same circuitry module 610 maybe used, but the first and/or second circuit elements 650 a, 650 b maybe swapped to provide different capabilities.

Though the first circuit element 650 a and the second circuit element650 b are each illustrated as a single element, it will be understoodthat in some embodiments, the first circuit element 650 a and/or thesecond circuit element 650 b may include a plurality of discretedevices. Similarly, the interconnections between the first and secondcircuit elements 650 a, 650 b and the RF transistor amplifier die 210are merely examples, and different configurations of conductive patterns673 may be provided without deviation from the present invention.

The conductive patterns 673 may also connect the third interconnectionpad 626 to one or more source leads 686. Thus, the source connection pad276 may be electrically coupled to the one or more source leads 686.

The conductive patterns 673 may be encased in an isolation material 615.In some embodiments, the isolation material 615 may include, forexample, silicon oxide, silicon nitride, an oxide of the conductivepatterns 673, a polymer, a molding compound, or a combination thereof.In some embodiments, circuitry module 610 may be formed as a printedcircuit board (PCB). In a PCB embodiment, the isolation material 615 maybe the substrate(s) of the PCB, and the conductive patterns 673 may betraces formed within the substrate(s).

Though FIG. 6A illustrates the use of a circuitry module 610 to coupleto a RF transistor amplifier die 210 using a coupling element 270, thepresent invention is not limited thereto. As illustrated in FIG. 6B, insome embodiments, the RF transistor amplifier die 210 may be directlycoupled to the circuitry module 610. For example, the gate terminal 222,drain terminal 224, and source terminal 226 of the RF transistoramplifier die 210 may be respectively coupled to the interconnectionpads 622, 624, 626 of the circuitry module 610 using, for example,bonding elements 320.

Similarly, it will be understood that other configurations of thecircuitry module 610 and the RF transistor amplifier die 210 arepossible, such as those illustrated in FIGS. 3C to 3E. In someembodiments, the circuitry module 610 may be configured to couple to anRF transistor amplifier die 210′ incorporating internal conductivepatterns, such as that illustrated in FIG. 3C. In some embodiments, thecircuitry module 610 may be configured to couple to multiple RFtransistor amplifier dies 210, such as that illustrated in FIGS. 3D and3E.

It will also be appreciated that the RF transistor amplifier die 210 mayhave a variety of different configurations. For example, while the RFtransistor amplifier dies 210 have top side gate, drain and sourceterminals 222, 224, 226, they may also, in some embodiments, have one ormore of back side gate, drain and source terminals 222′, 224′, 226′.Such a configuration is schematically shown in FIG. 6C, which is aschematic cross-sectional view of an RF transistor amplifier die 210″.As shown in FIG. 6C, gate vias 211, drain vias 213 and/or source vias215 may be formed through the semiconductor layer structure 230 thatconnect to respective gate, drain and source terminals 222′, 224′, 226′.As explained, for example, in U.S. Provisional Patent Application Ser.No. 63/004,985, filed Apr. 3, 2020 (“the '985 application”), includinggate and drain terminals on the back side of an RF transistor amplifierdie may have various advantages, such as allowing for more flexibleimpedance matching circuit implementations. The entire content of the'985 application is incorporated herein by reference. It will beappreciated that back side gate, drain and source terminals 222′, 224′,226′ and/or corresponding gate, drain and source vias 211, 213, 215 maybe included in any of the RF transistor amplifier dies disclosed herein.

While FIGS. 3A to 3E illustrate embodiments in which a circuit element350 is on a top surface of the circuitry module 310 (e.g., opposite thecircuitry module 310 from the RF transistor amplifier die 210) and FIGS.6A to 6C illustrate embodiments in which a circuit element 650 is on abottom surface of the circuitry module 610 (e.g., between the circuitrymodule 610 and the RF transistor amplifier die 210), it will beunderstood that other combinations are available. In some embodiments,the circuit elements 350/650 may be on both sides of the circuitrymodule 310/610. In some embodiments, the circuit elements 350/650 may beon side surfaces of the circuitry module 310/610.

As illustrated in FIGS. 6A-6C, multiple configurations of RF transistoramplifier die 210 and/or RF transistor amplifier 200 may be coupled to acircuitry module 610. In the subsequent figures, discussion will focuson embodiments in which the RF transistor amplifier die 210 is directlycoupled to circuitry module 610. However, it will be understood thatthis convention is merely for ease of description and the subsequentdiscussion related to the circuitry module 610 may be equally applied toother types of interconnections between the RF transistor amplifier 210(e.g., using a coupling element 270) and/or RF transistor amplifier 200without deviating from the present invention.

FIGS. 7A to 7E are schematic diagrams illustrating methods of couplingcircuitry modules and RF transistor amplifier dies according to certainembodiments of the present invention. As shown in FIG. 7A, a circuitrymodule 610 may be provided. The circuitry module 610 may have a firstside 601 and a second side 602. In some embodiments, the first side 601may expose first, second, and third interconnection pads 622, 624, 626as well as a first and second surface connection pads 672, 674. In someembodiments, the second side 602 may have an exposed gate lead 682,drain lead 684, and source lead 686.

Referring to FIG. 7B, a first circuit element 650 a and a second circuitelement 650 b may be provided on the first side 601 of the circuitrymodule 610. For example, a bonding element (e.g., solder balls and/orbumps 320) may be used to couple the first circuit element 650 a to thefirst surface connection pad 672. Similarly, a bonding element (e.g.,solder balls and/or bumps 320) may be used to couple the second circuitelement 650 b to the second surface connection pad 674.

Referring to FIG. 7C, an RF transistor amplifier die 210 may be providedon the first side 601 of the circuitry module 610. For example, abonding element (e.g., solder balls and/or bumps 320) may be used tocouple the gate terminal 222, the drain terminal 224, and the sourceterminal 226 of the RF transistor amplifier die 210 to the first,second, and third interconnection pads 622, 624, 626, respectively. Inwill be understood that the order of FIGS. 7B and 7C may be reversedsuch that the RF transistor amplifier die 210 is coupled to thecircuitry module 610 before the first and second circuit elements 650 a,650 b.

As shown in FIG. 7D, a capillary underfill process may be used to injectencapsulating material 625 between the conductive structures of the RFtransistor amplifier die 210, the first and second circuit elements 650a, 650 b, and/or the circuitry module 610. The encapsulating material625 may help prevent short circuits, enhance the structural integrity ofthe resulting device, and provide for proper impedance matching. In someembodiments, the encapsulating material 625 may also encapsulate the RFtransistor amplifier die 210 in protective material.

FIG. 7E illustrates an additional optional step in which a thermal layer240 is placed on the back side of the RF transistor amplifier die 210.In some embodiments, additional thermal management structures 642, suchas a metal flange, metal fin, heatsink, or other structure may beprovided on the thermal layer 240. In some embodiments, the thermalmanagement structures 642 may be part of a larger semiconductor package(e.g., a carrier substrate), as will be discussed further herein. Thethermal layer 240 may be a thermally conductive layer configured tofacilitate thermal transfer between the RF transistor amplifier die 210and the thermal management structure 642 to which the RF transistoramplifier die 210 is mounted. In some embodiments, the thermal layer 240and/or the thermal management structures 642 may be omitted. In someembodiments, the thermal layer 240 may be a die attach layer, such as aeutectic layer. The thermal layer 240 can be on the transistor amplifierdie 210 and/or extend onto the encapsulating material 625 and/or thefirst and second circuit elements 650 a, 650 b. The thermal layer 240can be a metal layer to form a eutective or other metal bond. In someembodiments, the thermal layer 240 can be a thermal adhesive.

The embodiments of FIGS. 6A to 6C provide a common gate lead 682, drainlead 684, and source lead 686 on a common side (e.g., second side 602)of the circuitry module 610. This may allow for the circuitry module 610to be attached with the second side 602 up in variety of differentconfigurations. For example, FIGS. 8A and 8B are schematiccross-sectional views of various packaging options 800 a, 800 b of thecircuitry module 610, according to some embodiments of the presentinvention. FIGS. 8A and 8B include elements of the RF transistoramplifier die 210 and circuitry module 610 that have been previouslydiscussed. As such, the discussion of FIGS. 8A and 8B will focus onthose portions of the embodiments that are different from thosediscussed with respect to the prior figures.

Referring to FIG. 8A, a semiconductor package 800 a may be similar tothe semiconductor package 500 a discussed herein with respect to FIG.5A, and duplicate descriptions already discussed with respect to thatfigure will be omitted. The semiconductor package 800 a may be, forexample, an open-air or open-cavity package. The semiconductor package800 a may include a carrier substrate 410, sidewalls 520, and a lid 525.The carrier substrate 410, sidewalls 520, and lid 525 may define aninternal cavity 530. The RF transistor amplifier die 210 and circuitrymodule 610 may be disposed inside the internal cavity 530. In someembodiments, a thermal layer 240 may be between the RF transistoramplifier die 210 and the carrier substrate 410.

The leads 415A, 415B may be configured to extend through the sidewalls520, though the present invention is not limited thereto. In someembodiments, the RF transistor amplifier 210 may be disposed on thecarrier substrate 410 and the leads 415A, 415B, and the circuitry module610 may be disposed on the RF transistor amplifier die 210. The leads415A, 415B may be coupled to the circuitry module 610 using, forexample, a conductive die attach material. In some embodiments, theleads 415A, 415B may extend from the sidewalls 520 to contact and/or beconnected to the circuitry module 610. For example, the lead 415 a maybe coupled to gate lead 682 and lead 415 b may be coupled to drain lead684. In some embodiments, an additional lead and/or connection (notshown) may be coupled to source lead 686. As such, in some embodiments,the use of wire bonds to connect the RF transistor amplifier die 210 toleads 415A, 415B may be avoided and/or reduced.

Referring to FIG. 8B, a semiconductor package 800 b may incorporate theRF transistor amplifier 210 and circuitry module 610 according toembodiments of the present invention. The semiconductor package 800 bmay be similar to the semiconductor package 500 b discussed herein withrespect to FIG. 5B, and duplicate descriptions already discussed withrespect to that figure will be omitted. The semiconductor package 800 bmay be, for example, an overmolded plastic (OMP) package.

In the semiconductor package 800 b according to the present invention,leads 415A, 415B may extend from outside the semiconductor package 800 band into the overmold material 540 so as to connect to the circuitrymodule 610. For example, the lead 415 a may be coupled to gate lead 682and lead 415 b may be coupled to drain lead 684. In some embodiments,and additional lead and/or connection (not shown) may be coupled tosource lead 686. In some embodiments, a thermal layer 240 may be betweenthe RF transistor amplifier die 210 and a carrier substrate 410 withinthe semiconductor package 800 b.

In addition to semiconductor packages 800 a, 800 b illustrated withrespect to FIGS. 8A and 8B, it will be understood that other packagingconfigurations are possible without deviating from the presentinvention. For example, the circuitry module 610 may be utilized withsemiconductor packages similar to those of FIG. 5C, as well as otherconfigurations.

In FIGS. 6A to 6C, the circuit elements 650 a, 650 b and RF transistoramplifier die 210 are on the same side of the circuitry module 610,while the gate, drain, and source leads 682, 684, 686 are on an oppositeside, but the present embodiments are not limited thereto. FIG. 9A is aplan view of an embodiment of a circuitry module 610B, according to someembodiments of the present invention, in which the leads 682, 684, 686,circuit elements 650 a, 650 b, and RF transistor amplifier die 210 areall on a same side of the circuitry module 610B. FIG. 9B is across-sectional view taken along line 9B-9B of FIG. 9A. FIG. 9C is across-sectional view taken along line 9C-9C of FIG. 9A. FIGS. 9A to 9Cinclude elements of the RF transistor amplifier die 210 and circuitrymodule 610 that have been previously discussed. As such, the discussionof FIGS. 9A to 9C will focus on those portions of the embodiments thatare different from those discussed with respect to the prior figures.

Referring to FIGS. 9A to 9C, the circuitry module 610B may be mounted onthe RF transistor amplifier die 210. The RF transistor amplifier die 210is mounted below the circuitry module 610B in the schematic plan view ofFIG. 9A, and hence is shown using dashed lines. The circuitry module610B may be configured to couple to the gate terminal 222, the drainterminal 224, and/or the source terminal 226 of the RF transistoramplifier die 210. Though FIGS. 9A to 9C illustrate that the circuitrymodule 610B is coupled directly to the RF transistor amplifier die 210,it will be understood that other connection types are possible, such asother configurations of RF transistor amplifier 200, including thoseillustrated with respect to FIGS. 2A to 2L. For example, a couplingelement 270 may be coupled between the circuitry module 610B and the RFtransistor amplifier die 210.

For example, the circuitry module 610B may have exposed interconnectionpads 622, 624, 626 that may be configured to be respectively coupled tothe gate terminal 222, the drain terminal 224, and the source terminal226 of the RF transistor amplifier die 210. For example, the firstinterconnection pad 622 may be configured to couple to the gate terminal222, the second interconnection pad 624 may be configured to couple tothe drain terminal 224, and the third interconnection pad 626 may beconfigured to couple to the source terminal 226. In some embodiments, abonding element (e.g., solder balls and/or bumps 320) may be used torespectively couple the first, second, and third interconnection pads622, 624, 626 to the gate terminal 222, the drain terminal 224, and thesource terminal 226, respectively. Though illustrated as a single pad,in some embodiments, one or more of the first, second, and/or thirdinterconnection pads 622, 624, 626 may include a plurality of pads.

The circuitry module 610B may be coupled to the RF transistor amplifierdie 210 on a first side 601 of the circuitry module 610B. In addition, agate lead 682B, a drain lead 684B, and a source lead 686B may be exposedon the first side 601 of the circuitry module 610B. As will be discussedfurther herein, the gate lead 682B, the drain lead 684B, and the sourcelead 686B may be configured to be respectively coupled to the gateterminal 222, the drain terminal 224, and the source terminal 226 of theRF transistor amplifier die 210. An encapsulating material 625 may be onsurfaces of the RF transistor amplifier die 201, and/or the circuitrymodule 610B.

Each of the first, second, and third interconnection pads 622, 624, 626may be coupled to one or more conductive patterns 673B within thecircuitry module 610B. The conductive patterns 673B may provide variousrouting and/or circuitry within the circuitry module 610B. For example,the conductive patterns 673B may connect the first interconnection pad622 to one or more first surface connection pads 672 and the gate lead682B. In some embodiments, the first surface connection pads 672 may beexposed on the first side 601 of the circuitry module 610B. In someembodiments, a first circuit element 650 a may be coupled to one or moreof the first surface connection pads 672 so as to be electricallycoupled between the gate lead 682B and the first interconnection pad622. In some embodiments, the first circuit element 650 a may be coupledbetween the gate lead 682B and the gate terminal 222 of the RFtransistor amplifier die 210. Consequently, the first circuit element650 a may be electrically coupled between gates of the RF transistoramplifier die 210 and the gate lead 682B. In some embodiments, the firstcircuit element 650 a may be coupled to the first side 601 of thecircuitry module 610B. Thus, the first circuit element 650 a may becoupled to a same side (e.g., the first side 601) of the circuitrymodule 610B as the RF transistor amplifier die 210 and the gate lead682B.

Similarly, the conductive patterns 673B may connect the secondinterconnection pad 624 to the drain terminal 224 and the drain lead684B. In some embodiments, a second circuit element 650 b may be coupledto one or more of the second surface connection pads 674 so as to beelectrically coupled between the drain lead 684B and the secondinterconnection pad 624. In some embodiments, the second surfaceconnection pads 674 may be exposed on the first side 601 of thecircuitry module 610B. In some embodiments, the second circuit element650 b may be coupled between the drain lead 684B and the drain terminal224 of the RF transistor amplifier die 210. Consequently, the secondcircuit element 650 b may be electrically coupled between drains of theRF transistor amplifier die 210 and the drain lead 684B.

The conductive patterns 673B may also connect the third interconnectionpad 626 to one or more source leads 686B. The source leads 686B may beon the same first side 601 as the third interconnection pad 626 and theRF transistor amplifier die 210. In some embodiments, as illustrated inFIG. 9A, the gate lead 682B and the drain lead 684B may be on twoopposite sides of the RF transistor amplifier die 210 and the sourceleads 686B may be on different sides of the RF transistor amplifier die210 than the two opposite sides. Stated another way, in someembodiments, the gate lead 682B may be adjacent a first side of the RFtransistor amplifier die 210, the drain lead 684B may be adjacent asecond side of the RF transistor amplifier die 210, and one or more ofthe source leads 686B may be adjacent a third side of the RF transistoramplifier die 210 that is different from the first and second sides ofthe RF transistor amplifier die 210.

The circuitry module 610B of FIGS. 9A to 9C may differ from thecircuitry module 610 of FIGS. 6A to 6C in that the circuitry module 610Bprovides the gate, drain, and source leads 682B, 684B, 686B on a sameside of the circuitry module 610B as the RF transistor amplifier die210. That is to say that the conductive patterns 673 of the circuitrymodule 610B may be configured to allow the gate, drain, and source leads682B, 684B, 686B to be exposed on a different portion of the circuitrymodule 610B. By shifting the side at which the gate, drain, and sourceleads 682B, 684B, 686B are located, additional packaging options arepossible.

FIG. 9D is a cross-sectional view of the circuitry module 610B of FIG.9A, mounted on a carrier substrate 410 according to some embodiments ofthe present invention. As illustrated in FIG. 9D, the circuitry module610B may be coupled on the RF transistor amplifier die 210, which maybe, in turn, on the carrier substrate 410.

In some embodiments, a thermal layer 240 may be between the RFtransistor amplifier die 210 and the carrier substrate 410. In someembodiments, an additional thermal management structure 642, such as ametal flange, metal fin, heatsink, or other structure may be provided onthe thermal layer 240 and/or between the thermal layer 240 and thecarrier substrate 410. The thermal layer 240 may be a thermallyconductive layer configured to facilitate thermal transfer between theRF transistor amplifier die 210 and a carrier substrate 410 to which theRF transistor amplifier die 210 is mounted. In some embodiments, thethermal layer 240 and/or the thermal management structure 642 may beomitted. In some embodiments, the thermal layer 240 may be a die attachlayer, such as a eutectic layer. The thermal layer 240 can be on the RFtransistor amplifier die 210 and/or extend onto the encapsulatingmaterial 625 and/or the first and second circuit elements 650 a, 650 b.The thermal layer 240 can be a metal layer to form a eutective or othermetal bond. In some embodiments, the thermal layer 240 can be a thermaladhesive.

In some embodiments additional contacts may be provided in the carriersubstrate 410, though the present invention is not limited thereto. Forexample, a gate connector 982, a drain connector 984, and/or a sourceconnector (not shown) may be provided on and/or in the carrier substrate410. For example, the gate lead 682B of the circuitry module 610B may beconfigured to be coupled (e.g., via a bonding element such as solderballs and/or bumps 320) to the gate connector 982, the drain lead 684Bmay be configured to be coupled to the drain connector 984, and thesource lead 686B may be configured to be coupled to a source connector(not shown).

It will be understood that the packaging example of FIG. 9B is merely anexample, and the present invention is not limited thereto. In someembodiments, the circuitry module 610B of FIGS. 9A to 9C can be coupledwithin other semiconductor packages described herein, such as thosediscussed with respect to FIGS. 5A to 5C and FIGS. 8A and 8B. Forexample, FIGS. 10A and 10B are schematic cross-sectional views ofvarious packaging options 1000 a, 1000 b of the circuitry module 610B,according to some embodiments of the present invention. FIGS. 10A and10B include elements of the RF transistor amplifier die 210 andcircuitry module 610B that have been previously discussed. As such, thediscussion of FIGS. 10A and 10B will focus on those portions of theembodiments that are different from those discussed with respect to theprior figures.

Referring to FIG. 10A, a semiconductor package 1000 a may be similar tothe semiconductor packages 500 a and 800 a discussed herein with respectto FIGS. 5A and 8A, respectively, and duplicate descriptions alreadydiscussed with respect to those figures will be omitted. Thesemiconductor package 1000 a may be, for example, an open-air oropen-cavity package. The semiconductor package 1000 a may include acarrier substrate 410, sidewalls 520, and a lid 525. The carriersubstrate 410, sidewalls 520, and lid 525 may define an internal cavity530. The RF transistor amplifier die 210 and circuitry module 610B maybe disposed inside the internal cavity 530. In some embodiments, athermal layer 240 may be between the RF transistor amplifier die 210 andthe carrier substrate 410.

The leads 415A, 415B may be configured to extend through the sidewalls520, though the present invention is not limited thereto. In someembodiments, the RF transistor amplifier 210 may be disposed on thecarrier substrate 410 and the leads 415A, 415B, and the circuitry module610B may be disposed on the RF transistor amplifier die 210. The leads415A, 415B may be coupled to the circuitry module 610B using, forexample, a conductive die attach material. For example, the lead 415 amay be coupled to gate lead 682B and lead 415 b may be coupled to drainlead 684B. In some embodiments, an additional lead and/or connection(not shown) may be coupled to source lead 686B. As such, in someembodiments, the use of wire bonds to connect the RF transistoramplifier die 210 to leads 415A, 415B may be avoided and/or reduced.

Referring to FIG. 10B, a semiconductor package 1000 b may incorporatethe RF transistor amplifier 210 and circuitry module 610B according toembodiments of the present invention. The semiconductor package 1000 bmay be similar to the semiconductor package 500 b and 800 b discussedherein with respect to FIGS. 5B and 8B, and duplicate descriptionsalready discussed with respect to that figure will be omitted. Thesemiconductor package 1000 b may be, for example, an overmolded plastic(OMP) package.

In the semiconductor package 1000 b according to the present invention,leads 415A, 415B may extend from outside the semiconductor package 800 band into the overmold material 540 so as to connect to the circuitrymodule 610B. For example, the lead 415 a may be coupled to gate lead682B and lead 415 b may be coupled to drain lead 684B. In someembodiments, an additional lead and/or connection (not shown) may becoupled to source lead 686B.

In addition to semiconductor packages 1000 a, 1000 b illustrated withrespect to FIGS. 10A and 10B, it will be understood that other packagingconfigurations are possible without deviating from the presentinvention. For example, the circuitry module 610B may be utilized withsemiconductor packages similar to those of FIG. 5C, as well as otherconfigurations.

As discussed herein, circuitry modules may include circuit elements onsurfaces of the circuitry modules, but may also include circuit elementswithin the circuitry module itself. FIGS. 11A to 11D are schematiccross-sectional views of additional embodiments of an RF transistoramplifier die 210 coupled to a circuitry module 610C, according to someembodiments of the present invention. FIGS. 11A to 11D include elementsof the RF transistor amplifier die 210 and circuitry module 610C thathave been previously discussed. As such, the discussion of FIGS. 11A to11D will focus on those portions of the embodiments that are differentfrom those discussed with respect to the prior figures.

Referring to FIG. 11A, the circuitry module 610C may be mounted on theRF transistor amplifier die 210. The circuitry module 610C may beconfigured to couple to the gate terminal 222, the drain terminal 224,and the source terminal 226 of the RF transistor amplifier die 210.Though FIG. 11A illustrates that the circuitry module 610C is coupleddirectly to the RF transistor amplifier die 210, it will be understoodthat other connection types are possible, such as other configurationsof RF transistor amplifier 200, including those illustrated with respectto FIGS. 2A to 2L. For example, a coupling element 270 may be coupledbetween the circuitry module 610C and the RF transistor amplifier die210.

The circuitry module 610C may have exposed interconnection pads 622,624, 626 that may be configured to be respectively coupled to the gateterminal 222, the drain terminal 224, and the source terminal 226. Insome embodiments, a bonding element (e.g., solder balls and/or bumps320) may be used to respectively couple the first, second, and thirdinterconnection pads 622, 624, 626 to the gate terminal 222, the drainterminal 224, and the source terminal 226. Though illustrated as asingle pad, in some embodiments, one or more of the first, second,and/or third interconnection pads 622, 624, 626 may include a pluralityof pads.

The circuitry module 610C may be coupled to the RF transistor amplifierdie on a first side 601 of the circuitry module 610C. In addition, agate lead 682C, a drain lead 684C, and/or a source lead (not shown) maybe exposed on the first side 601 of the circuitry module 610C. The gatelead 682C, the drain lead 684C, and/or the source lead may be configuredto be respectively coupled to the gate terminal 222, the drain terminal224, and the source terminal 226 of the RF transistor amplifier die 210.

The circuitry module 610C may contain one or more conductive patterns1173, a first circuit element 1150 a, and a second circuit element 1150b. The first and second circuit elements 1150 a and 1150 b areillustrated schematically in FIG. 11A. The circuitry module 610C maydiffer from that of circuitry modules 610, 610B described herein in thatfirst and second circuit elements 1150 a and 1150 b may be incorporatedwithin the structure of the circuitry module 610C. For example, platecapacitors, interdigitated finger capacitors and/or capacitors may beimplemented using the conductive patterns 1173 within the circuitrymodule 610C. Likewise spiral inductors or other inductive elements mayalso be implemented within the circuitry module 610C. Resistive elementsmay be formed on or within the circuitry module 610C by, for example,forming trace segments or conductive vias using higher resistanceconductive materials.

In some embodiments, the first and second circuit elements 1150 a, 1150b and/or the conductive patterns 1173 may be configured to provide atleast part of harmonic terminating circuitry, matching circuitry,splitting circuitry, combining circuitry, and/or biasing circuitry.Other configurations of the conductive patterns 1173 and/or other typesof circuit elements 1150 a, 1150 b may be used without deviating fromthe scope of the present invention. It will also be appreciated that theconfiguration of the conductive patterns 1173 and circuit elements 1150a, 1150 b illustrated in FIG. 11A are merely examples and are notintended to limit embodiments of the present invention.

In some embodiments, the circuitry module 610C may be formed as a PCBmodule and the first and second circuit elements 1150 a, 1150 b may beformed from traces within the PCB. In some embodiments, the circuitrymodule 610C may be formed of an insulating material 615, and theconductive patterns 1173 may be conductive material within theinsulating material 615, such as conductive pillars and/or vias (e.g.,copper pillars).

Each of the first, second, and third interconnection pads 622, 624, 626may be coupled to one or more of the conductive patterns 1173 within thecircuitry module 610C. The conductive patterns 1173 may provide variousrouting and/or circuitry within the circuitry module 610C. For example,the conductive patterns 1173 may connect the first interconnection pad622 to the gate lead 682C via the first circuit element 1150 a. Thefirst circuit element 1150 a may provide input matching and/or harmonictermination functionality between the gate lead 682C and the firstinterconnection pad 622.

Similarly, the conductive patterns 1173 may connect the secondinterconnection pad 624 to the drain lead 684C via the second circuitelement 1150 b. The second circuit element 1150 b may provide outputmatching and/or harmonic termination functionality between the drainlead 684C and the second interconnection pad 624.

As illustrated in FIG. 11A, in some embodiments, an encapsulatingmaterial 1125 may be formed on the RF transistor amplifier die 210, thecircuitry module 610C, the gate lead 682C, and/or the drain lead 684C.The encapsulating material 1125 may help prevent short circuits, enhancethe structural integrity of the resulting device, and provide for properimpedance matching. In some embodiments, the encapsulating material 1125may also encapsulate the RF transistor amplifier die 210 in protectivematerial.

In some embodiments, through vias 1115 may be formed in theencapsulating material 1125. The through vias 1115 may includeconductive material and provide a conductive path to the gate lead 682Cand/or drain lead 684C. For example, the through vias 1115 may exposegate connection 1182 and/or drain connection 1184 on a bottom surface ofthe encapsulating material 1125. The gate connection 1182 and/or drainconnection 1184 may provide connection points for the gate lead 682C andthe drain lead 684C, respectively.

In some embodiments, the gate connection 1182 and the drain connection1184 may be approximately coplanar. In some embodiments, theencapsulating material 1125 may be configured to expose a bottom surfaceof the RF transistor amplifier die 210, and the gate connection 1182 andthe drain connection 1184 may also be approximately coplanar with thebottom surface of the RF transistor amplifier die 210, though thepresent invention is not limited thereto. Though only the gateconnection 1182 and the drain connection 1184 are illustrated in FIG.11A, it will be understood that source connections may also be providedin a similar manner.

The use of the gate connection 1182 and the drain connection 1184 mayallow for the use of direct bonding between the combination of the RFtransistor amplifier die 210 and the circuitry module 610C and otherpads and/or dies. For example, as illustrated in FIG. 11B, the gateconnection 1182 may be coupled to a gate pad 1192 (e.g., via a bondingelement such a solder) and the drain connection 1184 may be coupled to agate pad 1194. In some embodiments, a thermal layer 240 may also beprovided beneath the RF transistor amplifier die 210, though the presentinvention is not limited thereto. In some embodiments, the thermal layer240 may be omitted. In some embodiments, additional contacts may beprovided to connect to the third interconnection pad 626 and/or thesource terminal 226 of the RF transistor amplifier die 210.

It will be understood that the packaging example of FIG. 11B is merelyan example, and the present invention is not limited thereto. FIGS. 11Cand 11D illustrate the use of packaging similar to that discussed hereinwith respect to FIGS. 5A to 5C, 8A, 8B, 10A, and 10B. For example, thecircuitry module 610C, the RF transistor amplifier die 210, and theencapsulating material 1125 including the gate and drain connection1182, 1184 may be placed in an open-cavity semiconductor package 1100 a(FIG. 11C) or an OMP package 1100 b (FIG. 11D). Elements in FIGS. 11Cand 11D of the semiconductor package 1100 a and semiconductor package1100 b that are similar to those previously discussed with respect toFIGS. 5A to 5C, 8A, 8B, 10A, and 10B will be omitted for brevity.

In some embodiments, the gate connection 1182 may be coupled to gatelead 415A by a bonding element (e.g., solder balls and/or bumps) and thedrain connection 1184 may also be coupled to drain lead 415B. The gatelead 415A and the drain lead 415B may be electrically insulated from thecarrier substrate 410 (e.g., by an insulating layer and/or the overmoldmaterial 540). In some embodiments, a thermal layer 240 may be betweenthe RF transistor amplifier die 210 and the carrier substrate 410. Insome embodiments, the thermal layer 240 may be omitted. In someembodiments, the thermal layer 240 may be a die attach layer, such as aeutectic layer. The thermal layer 240 can be on the transistor amplifierdie 210 and/or extend onto the encapsulating material 1125. The thermallayer 240 can be a metal layer to form a eutective or other metal bond.In some embodiments, the thermal layer 240 can be a thermal adhesive.Though not shown in FIGS. 11C and 11D, in some embodiments additionalthermal management structures such as those illustrated in FIGS. 7E and9D may be used.

The packaging embodiments illustrated in FIGS. 11C and 11D are merelyexamples meant to illustrate how the circuitry module 610C and the RFtransistor amplifier die 210 may be coupled within a semiconductorpackage. It will be understood that multiple other possibleconfigurations and/or orientations of the semiconductor package arepossible without deviating from the present invention.

In some embodiments, the through vias 1115 and/or encapsulating material1125 may be omitted. For example, FIGS. 12A to 12D are schematiccross-sectional views of additional embodiments of RF transistoramplifier die 210 coupled to circuitry module 610C, according to someembodiments of the present invention. As illustrated in FIG. 12A, thecircuitry module 610C may be substantially similar to that of FIGS. 11Ato 11D and, as such, a duplicate description thereof will be omitted.The embodiment of FIG. 12A, for example, may omit the encapsulatingmaterial 1125, through vias 1115, and/or the gate/drain connections1182, 1184 and directly expose the gate lead 682C and the drain lead684C. Though FIG. 12A illustrates that all of the encapsulating material1125 is removed, it will be understood that, in some embodiments, someencapsulating material 1125 may be present. For example, in someembodiments, encapsulating material 1125 may be on portions of the RFtransistor amplifier die 210 and the circuitry module 610C, but mayexpose the gate lead 682C and the drain lead 684C.

The embodiments illustrated in FIG. 12A may be utilized in multiplepackaging configurations. FIGS. 12B and 12C illustrate the use ofpackaging similar to that discussed herein with respect to FIGS. 5A to5C, 8A, 8B, 10A, and 10B. For example, the circuitry module 610C and theRF transistor amplifier die 210 may be placed in an open-cavitysemiconductor package 1200 a (FIG. 12B) or an OMP package 1200 b (FIG.12C). Elements in FIGS. 12B and 12C of the semiconductor package 1200 aand semiconductor package 1200 b that are similar to those previouslydiscussed with respect to FIGS. 5A to 5C, 8A, 8B, 10A, and 10B will beomitted for brevity. In some embodiments, the gate lead 682C may becoupled to gate lead 415A by a bonding element (e.g., solder ballsand/or bumps 320) and the drain lead 684C may also be coupled to drainlead 415B. It will be understood that multiple other possibleconfigurations and/or orientations of the semiconductor package arepossible without deviating from the present invention.

Though many of the embodiments described herein have reduced and/oromitted wire bonds, it will be understood that the present invention maystill improve configurations utilizing wire bonds. For example, FIG. 12Dillustrates a semiconductor package 1200 c utilizing circuitry module610C that utilizes wire bonds. Referring to FIG. 12D, a semiconductorpackage 1200 c may be, for example, an open-air or open-cavity package.The semiconductor package 1200 c may include a carrier substrate 410,sidewalls 520, and a lid 525. The carrier substrate 410, sidewalls 520,and lid 525 may define an internal cavity 530. The RF transistoramplifier die 210 and circuitry module 610C may be disposed inside theinternal cavity 530.

The leads 415A, 415B may be configured to extend through the sidewalls520, though the present invention is not limited thereto. In someembodiments, the circuitry module 610C may be disposed on the carriersubstrate 410 and the leads 415A, 415B, and the RF transistor amplifierdie 210 may be disposed on the circuitry module 610C. The leads 415A,415B may be coupled to the circuitry module 610C using, for example,wire bonds 1280. For example, the lead 415 a may be coupled to gate lead682C and lead 415 b may be coupled to drain lead 684C. Though thesemiconductor package 1200 c utilizes wire bonds 1280, it still benefitsfrom the direct connection between the RF transistor amplifier die 210and the circuitry modules 610C. Moreover, the circuitry module 610Cincorporates the first and second circuit elements 1150 a, 1150 b thatmay allow for additional internalized functionality, such as harmonictermination and/or input/output impedance matching. In addition, the useof the circuitry modules 610C allows for greater flexibility in thatdifferent performance characteristics (e.g., to address harmonics atdifferent frequencies, different impedances, etc.) may be achievedsimply by swapping circuitry modules 610C.

While FIG. 12D utilizes the circuitry module 610C, it will be understoodthat the wire bonds 1280 may be incorporated into other semiconductorpackaging configurations utilizing any of the circuitry modules and/orRF transistor amplifiers described herein.

Referring back to FIGS. 6A to 6C, various embodiments are illustratedthat provide an RF transistor amplifier die 210 coupled to a circuitrymodule 610. In some embodiments, the RF transistor amplifier die 210 isdirectly coupled to the circuitry module 610 (e.g., FIG. 6B) and, insome embodiments, the RF transistor amplifier die 210 is coupled to thecircuitry module 610 via a coupling element 270 (e.g., FIG. 6A). Inembodiments of those such as FIGS. 6A to 6C, an encapsulating material625 may be on one or more sides of the RF transistor amplifier die 210,which may protect/enclose the RF transistor amplifier die 210. In someembodiments, as illustrated in FIGS. 6A to 6C, a bottom surface of theRF transistor amplifier die 210 may be exposed by the encapsulatingmaterial 625, but the present invention is not limited thereto.

FIGS. 13A to 13D are schematic cross-sectional views of additionalembodiments of an RF transistor amplifier die 210 coupled to a circuitrymodule 610 and incorporating a spacer, according to some embodiments ofthe present invention. Portions of FIGS. 13A to 13D that are previouslydescribed will not be described again here for brevity. Referring toFIG. 13A, in some embodiments a spacer 245 may be placed on a bottomsurface 210 a of the RF transistor amplifier die 210. The encapsulatingmaterial 625 may expose a bottom surface 245 a of the spacer 245.

In some embodiments, the spacer 245 may be formed of an electricallyand/or thermally conductive material, such as metal. In someembodiments, the spacer 245 may be or include gold (Au) Copper (Cu), aCu alloy, gold-tin (AuSn), and/or epoxy, though the present invention isnot limited thereto. In some embodiments, the spacer 245 may beelectrically insulating and/or may be or include, for example, adielectric material, such as silicon oxide, silicon nitride, a polymer,a molding compound, or a combination thereof, though the presentinvention is not limited thereto. In some embodiments, the spacer 245may be thermally conductive. As such, the spacer 245 may be configuredto dissipate heat transferred from the RF transistor amplifier die 210.In some embodiments, the spacer 245 may be composed of a plurality oflayers, though the present invention is not limited thereto. In someembodiments, the spacer 245 may perform similar functions and/or becomposed of similar material as the thermal layer 240 described herein.Incorporating the spacer 245 onto the RF transistor amplifier die 210within the encapsulating material 625 may provide a packaging optionthat is easier to distribute and attach. Though FIG. 13A illustrates anembodiment in which the RF transistor amplifier die 210 is directlycoupled to the circuitry module 610, the present invention is notlimited thereto. In some embodiments, the transistor amplifier die 210may be coupled to the circuitry module 610 via a coupling element 270 ina manner similar to that illustrated in FIG. 6B. Similarly, in someembodiments the RF transistor amplifier die 210 may incorporate on-dieRDL, such as in the RF transistor amplifier die 210′ of FIG. 3C.

As illustrated in FIG. 13A, the encapsulating material 625 may be on theRF transistor amplifier die 210 and on the first and second circuitelements 650 a, 650 b. However, the present invention is not limited tosuch a configuration. Depending on the electrical and thermalrequirements for the first and second circuit elements 650 a, 650 b,alternative and/or additional terminal/bonding/spacer structures can beutilized with at least one of the first and second circuit elements 650a, 650 b to provide electrical conductivity, thermal conductivity and/ora mechanical interface to one of more of the first and second circuitelements 650 a, 650 b.

In some embodiments, surfaces of the first and second circuit elements650 a, 650 b may be exposed and/or coupled to auxiliary spacers as partof the RF transistor amplifier. For example, FIG. 13B is a schematiccross-sectional view of an RF transistor amplifier die 210 coupled to acircuitry module 610, according to some embodiments of the presentinvention. As illustrated in FIG. 13B, the circuitry module 610 and/orRF transistor amplifier die 210 may be substantially similar toembodiments previously described and, as such, a duplicate descriptionthereof will be omitted. The embodiment illustrated in FIG. 13B, forexample, may include a first auxiliary spacer 246 a and a secondauxiliary spacer 246 b.

In some embodiments, first auxiliary spacer 246 a may be formed on thefirst circuit element 650 a. In some embodiments, second auxiliaryspacer 246 b may be formed on the second circuit element 650B. Forexample, the first auxiliary spacer 246 a may be formed to be on and/orcontact the first circuit element 650 a and the second auxiliary spacer246 b may be formed to be on and/or contact the second circuit element650 b. In some embodiments, the first and/or second auxiliary spacers246 a, 246 b may be formed of an electrically and/or thermallyconductive material, such as metal. In some embodiments, a surface ofthe first and/or second auxiliary spacers 246 a, 246 b may be exposedfrom the encapsulating material 625. In some embodiments, the firstand/or second auxiliary spacers 246 a, 246 b may be or include gold (Au)Copper (Cu), a Cu alloy, gold-tin (AuSn), and/or epoxy, though thepresent invention is not limited thereto. The first and/or secondauxiliary spacers 246 a, 246 b may be configured to be electricallycoupled to the first and/or second circuit elements 650 a, 650 b andmay, for example, provide a mechanism by which a ground signal isprovided to the first and/or second circuit elements 650 a, 650 b. Insome embodiments, the first and/or second auxiliary spacers 246 a, 246 bmay be thermally conductive. As such, the first and/or second auxiliaryspacers 246 a, 246 b may be configured to dissipate heat transferredfrom the first and/or second circuit elements 650 a, 650 b. In someembodiments, the first and/or second auxiliary spacers 246 a, 246 b maybe electrically insulating and/or may be or include, for example, adielectric material, such as silicon oxide, silicon nitride, a polymer,a molding compound, or a combination thereof, though the presentinvention is not limited thereto. In some embodiments, the first and/orsecond auxiliary spacers 246 a, 246 b may be composed of a plurality oflayers, though the present invention is not limited thereto.

In some embodiments the first and/or second auxiliary spacers 246 a, 246b may be composed of a similar material as the spacer 245, though thepresent invention is not limited thereto. In some embodiments, the firstand/or second auxiliary spacers 246 a, 246 b may be composed of adifferent material than the spacer 245. In some embodiments, the firstand/or second auxiliary spacers 246 a, 246 b may be electricallydisconnected from the spacer 245. Forming the first and/or secondauxiliary spacers 246 a, 246 b from a different material than, and/orelectrically disconnected from, the spacer 245 may assist in limitingcurrent sharing and/or current eddies between the RF transistoramplifier die 210 and the first and/or second circuit elements 650 a,650 b. Though the first auxiliary spacer 246 a, the second auxiliaryspacer 246 b, and the spacer 245 are illustrated as separate discreteelements, the present invention is not limited thereto. In someembodiments, the first auxiliary spacer 246 a, the second auxiliaryspacer 246 b, and the spacer 245 may be connected together as anintegral layer (see, e.g., FIG. 13C).

The materials/thicknesses of the first and second auxiliary spacers 246a, 246 b can be the same or different materials/thicknesses as thespacer 245. In some embodiments, the spacer 245 and the first and secondauxiliary spacers 246 a, 246 b may have different thicknesses so thatthe bottoms of the first and second auxiliary spacers 246 a, 246 b areplanar with the bottom of the spacer 245 for ease ofpackaging/manufacture/bonding of the RF transistor amplifier die 210 andcircuitry module 610 to a package substrate or a circuit board. In someembodiments, the spacer 245 and the first and second auxiliary spacers246 a, 246 b are the same thickness. In still other embodiments, thespacer 245 spans across the RF transistor amplifier die 210 and at leastone or all of the first and second circuit elements 650, 650 b toprovide, for example, the benefits of a planar interface surface.

Additional and/or intervening spacers, bonds and other layers can beprovided to provide desired electrical, thermal, and mechanicalinterfaces. Depending on the desired electrical, thermal, and/ormechanical properties desired, the layers can be made of electricallyand/or thermally conductive and/or insulative materials. For example, insome embodiments, the spacer 245 may be thermally conductive andelectrically insulating, while the first and second auxiliary spacers246 a, 246 b may be both electrically and thermally conductive. In someembodiments, only the spacer 245 may be present on the RF transistoramplifier die 210. In some embodiments, only the first auxiliary spacer246 a may be present on the first circuit element 650 a. In someembodiments, only the second auxiliary spacer 246 b may be present onthe second circuit element 650 b. In other embodiments, any combinationof spacer 245, first auxiliary spacer 246 a, and second auxiliary spacer246 b may be present.

In some embodiments, exposed surfaces of the first auxiliary spacer 246a, the second auxiliary spacer 246 b, and the spacer 245 may besubstantially coplanar. That is, the exposed surfaces of the firstauxiliary spacer 246 a, the second auxiliary spacer 246 b, and thespacer 24 may be configured to be mounted to a separate board (e.g., viaan attachment method such as solder and the like).

It will be understood a method of manufacturing of the embodiment ofFIGS. 13A to 13C may be similar to that illustrated with respect toFIGS. 7A to 7D. For example, manufacturing the RF transistor amplifierdevice may include the placement of the spacer 245 on the RF transistoramplifier die 210, the placement of the first auxiliary spacer 246 a onthe first circuit element 650 a, and the placement of the secondauxiliary spacer 246 b on the second circuit element 650 b. For example,the spacer 245 may be electrically and/or thermally connected to the RFtransistor amplifier die 210 (e.g., via die attach material). Forexample, the first auxiliary spacer 246 a and the second auxiliaryspacer 246 b may be electrically and/or thermally connected to the firstand second circuit elements 650 a, 650 b, respectively (e.g., via dieattach material). This step could be performed, for example, after theplacement of the first and second circuit elements 650 a, 650 b and theRF transistor amplifier die 210 on the circuitry module 610 (illustratedwith respect to FIGS. 7B and 7C). In some embodiments, the placement ofthe spacer 245, first auxiliary spacer 246 a, and second auxiliaryspacer 246 b may be performed before or after the formation of theencapsulating material 625 on the RF transistor amplifier die 210(illustrated with respect to FIG. 7D). In some embodiments, depositingthe spacer 245 may be performed by a different process than the firstauxiliary spacer 246 a and/or second auxiliary spacer 2465 b.

As discussed above, in some embodiments, the first auxiliary spacer 246a, the second auxiliary spacer 246 b, and the spacer 245 may beinterconnected and/or integrally formed. FIG. 13C illustrates anembodiment having an integrated spacer layer 245′. The integrated spacerlayer 245′ may extend to be connected to and/or contact the firstcircuit element 350 a, the second circuit element 350 b, and the RFtransistor amplifier die 10 (e.g., source terminal 26 of the RFtransistor amplifier die 10). In some embodiments, a surface 245 a′ ofthe integrated spacer layer 245′ may be exposed from the encapsulatingmaterial 325. In some embodiments, the integrated spacer layer 245′ maybe formed of a same or similar material as the first auxiliary spacer246 a, the second auxiliary spacer 246 b, and/or the spacer 245described with respect to previous embodiments. For example, theintegrated spacer layer 245′ may be formed of an electrically and/orthermally conductive material, such as metal. In some embodiments, theintegrated spacer layer 245′ may be or include gold (Au) Copper (Cu), aCu alloy, gold-tin (AuSn), and/or epoxy, though the present invention isnot limited thereto. In some embodiments, the integrated spacer layer245′ may be electrically insulating and/or may be or include, forexample, a dielectric material, such as silicon oxide, silicon nitride,a polymer, a molding compound, or a combination thereof, though thepresent invention is not limited thereto. In some embodiments, theintegrated spacer layer 245′ may be composed of a plurality of layers,though the present invention is not limited thereto. As used herein, an“integrated” spacer layer 245′ refers to a spacer layer 245′ that issubstantially continuous, though not necessarily of a uniformcomposition. In some embodiments, different portions of the integratedspacer layer 245′ may be composed of different materials. As an example,a portion of the integrated spacer layer 245′ on the first auxiliaryspacer 246 a and/or second auxiliary spacer 246 b may be different thana portion of the integrated spacer layer 245′ on the RF transistoramplifier die 210.

Though the integrated spacer layer 245′ is illustrated as a uniformlayer having a relatively planar upper surface 245 b′, the presentinvention is not limited thereto. In some embodiments, the upper surface245 b′ of the integrated spacer layer 245′ may be non-planar. Forexample, in some embodiments the first circuit element 650 a, the secondcircuit element 650 b, and the RF transistor amplifier die 210 may havedifferent heights, and the integrated spacer layer 245′ may be formed tohave an upper surface 245 b′ with portions at each of the differentheights of the first circuit element 650 a, the second circuit element650 b, and the RF transistor amplifier die 210.

FIG. 13D illustrates an example embodiment of an RF transistor amplifierdevice in which the first auxiliary spacer 246 a and the secondauxiliary spacer 246 b are omitted. Referring to FIG. 13D, a surface 650a_s of the first circuit element 650 a and/or a surface 650 b_s of thesecond circuit element 650 b may be exposed by the encapsulatingmaterial 625. The exposure of the surfaces 650 a_s, 650 b_s of the firstand/or second circuit elements 650 a, 650 b may allow for additionalexternal connections to be applied to the first and/or second circuitelements 650 a, 650 b. For example, separate electrical connections,such as to a ground signal, may be connected to the first and/or secondcircuit elements 650 a, 650 b by way of their respective exposedsurfaces 650 a_s, 650 b_s.

The RF transistor amplifier device of FIG. 13D may be formed, forexample, by constructing an embodiment similar to that of FIG. 13A andthen performing a planarizing operation on portions of the encapsulatingmaterial 625 to expose the surfaces 650 a_s, 650 b_s of the first and/orsecond circuit elements 650 a, 650 b.

The RF transistor amplifiers dies 210 coupled to circuitry modules 610illustrated in FIGS. 13A to 13D may be utilized in multiple packagingconfigurations. FIGS. 14A to 14D illustrate the use of packaging similarto that discussed herein with respect to FIGS. 8A and 8B. For example,the circuitry module 610 and the RF transistor amplifier die 210 may beplaced in an open-cavity semiconductor package 1400 a_1, 1400 a_2 (FIGS.14A and 14B) or an OMP package 1400 b_1, 1400 b_2 (FIGS. 14C and 14D).Elements in FIGS. 14A and 14B of the semiconductor package 1400 a_1 andsemiconductor package 1400 a_2 that are similar to those previouslydiscussed, such as with respect to FIG. 8A, will not be discussedfurther for the sake of brevity. Elements in FIGS. 14C and 14D of thesemiconductor package 1400 b_1 and semiconductor package 1400 b_2 thatare similar to those previously discussed, such as with respect to FIG.8B, will not be discussed further for the sake of brevity.

In FIGS. 14A and 14C, semiconductor packages 1400 a_1 and 1400 b_1illustrate the use of circuitry module 610 coupled to RF transistoramplifier die 210 within an open-cavity package and an OMP package. FIG.14A illustrates an open-cavity semiconductor package 1400 a_1 and FIG.14C illustrates an OMP semiconductor package 1400 b_1. The semiconductorpackages 1400 a_1 and 1400 b_1 further include the spacer 425, the firstauxiliary spacer 246 a, and the second auxiliary spacer 246 b such asthose illustrated and described with respect to FIG. 13B. The circuitrymodule 610 may expose gate lead 682 and drain lead 684 that may beconnected to leads 415A, 415B, respectively. In some embodiments, thesemiconductor packages 1400 a_1 and 1400 b_1 may include the firstauxiliary spacer 246 a, the second auxiliary spacer 246 b, and thespacer 245, that are substantially coplanar. Depending on the electricaland thermal requirements for the first and second circuit elements 650a, 650 b, additional terminal/bonding/spacer structures can be utilizedwith at least one of the first and second circuit elements 650 a, 650 bto provide an electrical, thermal, and/or mechanical interface betweenone of more of the at least one of the first and second circuit elements650 a, 650 b and the carrier substrate 410.

In some embodiments, the first auxiliary spacer 246 a and the secondauxiliary spacer 246 b may be composed of different materials than thespacer 425. For example, in some embodiments, the first auxiliary spacer246 a and the second auxiliary spacer 246 b may be electricallyconductive so as to be electrically coupled to the carrier substrate410. For example, the first auxiliary spacer 246 a and the secondauxiliary spacer 246 b may provide an electrical connection (e.g., aground signal) to the first and second circuit elements 650 a, 650 b. Insome embodiments, the spacer 245 may be thermally conductive but anelectric insulator. This may allow for the spacer 245 to dissipate heatfrom the RF transistor amplifier die 210. In some embodiments, first andsecond auxiliary spacers 246 a, 246 b may be electrically insulating orconductive, but may thermally connect the first and second circuitelements 650 a, 650 b to the carrier substrate 410 so as to dissipatethermal energy (e.g., heat) from the first and second circuit elements650 a, 650 b.

FIGS. 14B and 14D illustrate example semiconductor packages 1400 a_2,1400 b_2 that incorporate an integrated spacer layer 245 within anopen-cavity package and an OMP package. FIG. 14B illustrates anopen-cavity semiconductor package 1400 a_2 and FIG. 14D illustrates anOMP semiconductor package 1400 b_2. The semiconductor packages 1400 a_2,1400 b_2 may utilize the integrated spacer layer 245′ as discussedherein with respect to FIG. 13C. The integrated spacer layer 245′ may beconnected and/or directly contact the carrier substrate 410. Theintegrated spacer 245′ may be coupled to the to the first circuitelement 650 a, the second circuit element 650 b, and/or the RFtransistor amplifier die 210. In some embodiments, the integrated spacerlayer 245′ may be configured to have a surface (e.g., an upper surface)that is non-planar so as to couple to the first circuit element 650 a,the second circuit element 650 b, and the RF transistor amplifier die210. The present invention is not limited thereto and, in someembodiments, an upper surface of the integrated spacer layer 245′ may beplanar. In some embodiments, different portions of the integrated spacerlayer 245′ may be composed of different materials. In some embodiments,additional layers may be respectively disposed between the first andsecond circuit elements 650 a, 650 b and the integrated spacer layer245′ or between the integrated spacer layer 245′ and the carriersubstrate 410. (e.g., additional spacer layers).

In FIGS. 14A to 14D, RF transistor amplifier die 210 is illustrated asbeing directly coupled to the circuitry module 610 in the semiconductorpackages 1400 a_1, 1400 a_2, 1400 b_1, and 1400 b 2, but it will beunderstood that the RF transistor amplifier die 210 could also becoupled to the circuitry module via coupling element 270 or utilizing anon-die RDL, mutatis mutandis.

FIGS. 15A to 15D are schematic cross-sectional views of additional RFtransistor amplifier embodiments including circuitry module 610B andincorporating mechanisms to couple to the first and second circuitelements 650 a,650 b, according to some embodiments of the presentinvention. Portions of the RF transistor amplifiers die 210 and thecircuitry module 610B may be substantially similar to that of FIGS. 9Ato 9D, as well as other previously described figures, and, as such, aduplicate description thereof will be omitted. The embodiments of FIGS.15A to 15D may, for example, incorporate a circuitry module 610B thatexposes a gate lead 682B and/or a drain lead pad 684B on same side 601(e.g., a lower surface) of the circuitry module 610B to which the RFtransistor amplifier die 210 is coupled. The embodiment of the RFtransistor amplifier of FIGS. 15A to 15D, for example, may include anembodiment similar to that of FIG. 9B with the addition of a spacer 245,a first auxiliary spacer 246 a, and/or a second auxiliary spacer 246 b.

For example, FIG. 15A illustrates the RF transistor amplifier die 210coupled to the circuitry module 610B, with spacer 245 placed on a bottomsurface 210 a of the RF transistor amplifier die 210. The encapsulatingmaterial 625 may expose a bottom surface 245 a of the spacer 245.

In some embodiments, the spacer 245 may be formed of an electricallyand/or thermally conductive material, such as metal. In someembodiments, the spacer 245 may be or include gold (Au) Copper (Cu), aCu alloy, gold-tin (AuSn), and/or epoxy, though the present invention isnot limited thereto. In some embodiments, the spacer 245 may beelectrically insulating and/or may be or include, for example, adielectric material, such as silicon oxide, silicon nitride, a polymer,a molding compound, or a combination thereof, though the presentinvention is not limited thereto. In some embodiments, the spacer 245may be thermally conductive. As such, the spacer 245 may be configuredto dissipate heat transferred from the RF transistor amplifier die 210.In some embodiments, the spacer 245 may perform similar functions and/orbe composed of similar material as the thermal layer 240 describedherein. In some embodiments, the spacer 245 may be composed of aplurality of layers, though the present invention is not limitedthereto. Though FIG. 15A illustrates an embodiment in which the RFtransistor amplifier die 210 is directly coupled to the circuitry module610, the present invention is not limited thereto. In some embodiments,the transistor amplifier die 210 may be coupled to the circuitry module610 via a coupling element 270 in a manner similar to that illustratedin FIG. 6B. Similarly, in some embodiments the RF transistor amplifierdie 210 may incorporate on-die RDL, such as in the RF transistoramplifier die 210′ of FIG. 3C.

FIG. 15B illustrates an embodiment similar to that of FIG. 15A, with theaddition of a first auxiliary spacer 246 a and a second auxiliary spacer246 b. In some embodiments, the first auxiliary spacer 246 a may beformed to be on and/or contact the first circuit element 650 a and thesecond auxiliary spacer 246 b may be formed to be on and/or contact thesecond circuit element 650 b. In some embodiments, the first and/orsecond auxiliary spacers 246 a, 246 b may be formed of an electricallyand/or thermally conductive material, such as metal. In someembodiments, a surface of the first and/or second auxiliary spacers 246a, 246 b may be exposed from the encapsulating material 625. In someembodiments, the first and/or second auxiliary spacers 246 a, 246 b maybe or include gold (Au) Copper (Cu), a Cu alloy, gold-tin (AuSn), and/orepoxy, though the present invention is not limited thereto. The firstand/or second auxiliary spacers 246 a, 246 b may provide a mechanism bywhich a ground signal is provided to, or thermal energy is dissipatedfrom, the first and/or second circuit elements 650 a, 650 b, asdiscussed herein with respect to other embodiments.

In some embodiments, the first and/or second auxiliary spacers 246 a,246 b may be composed of a similar material as the spacer 245, thoughthe present invention is not limited thereto. In some embodiments, thefirst and/or second auxiliary spacers 246 a, 246 b may be composed of adifferent material than the spacer 245. In some embodiments, the firstand/or second auxiliary spacers 246 a, 246 b may be electricallydisconnected (e.g., isolated) from the spacer 245. In some embodiments,the first and/or second auxiliary spacers 246 a, 246 b may be composedof a plurality of layers, though the present invention is not limitedthereto.

Though the first auxiliary spacer 246 a, the second auxiliary spacer 246b, and the spacer 245 are illustrated as separate discrete elements, thepresent invention is not limited thereto. In some embodiments, the firstauxiliary spacer 246 a, the second auxiliary spacer 246 b, and thespacer 245 may be formed as an integrated (e.g., interconnected) spacerlayer 245′. Such an embodiment is illustrated in FIG. 15C, whichrepresents an RF transistor amplifier die 210 coupled to a circuitrymodule 610B including an integrated spacer layer 245′. The integratedspacer layer 245′ may be similar to that discussed herein with respectto FIG. 13C. The integrated spacer layer 245′ may extend to contact thefirst circuit element 650 a, the second circuit element 650 b, and/orthe RF transistor amplifier die 210. In some embodiments, a surface 245a of the integrated spacer layer 245′ may be exposed from theencapsulating material 625. In some embodiments, the integrated spacerlayer 245′ may be formed of a same or similar material as the firstauxiliary spacer 246 a, the second auxiliary spacer 246 b, and/or thespacer 245. In some embodiments, the upper surface 245 b′ of theintegrated spacer layer 245′ may be non-planar or planar. For example,in some embodiments the first circuit element 650 a, the second circuitelement 650 b, and/or the RF transistor amplifier die 210 may havedifferent heights, and the integrated spacer layer 245′ may be formed tohave an upper surface 245 b′ with portions at each of the differentheights of the first circuit element 650 a, the second circuit element650 b, and the RF transistor amplifier die 210.

FIG. 15D illustrates an embodiment of an RF transistor amplifier devicein which the first auxiliary spacer 246 a and the second auxiliaryspacer 246 b are omitted. The RF transistor amplifier die 210 may becoupled to a circuitry module 610B similarly to that of FIG. 15A and, assuch, a duplicate description thereof will be omitted. Referring toFIGS. 15A and 15D, an upper surface 650 a_s of the first circuit element650 a and/or an upper surface 650 b_s of the second circuit element 650b may be exposed from the encapsulating material 625. The exposure ofthe surfaces 650 a_s, 650 b_s of the first and/or second circuitelements 650 a, 650 b may allow for additional external connections tobe applied to the first and/or second circuit elements 650 a, 650 b. Forexample, separate electrical connections, such as to a ground signal,may be connected to the first and/or second circuit elements 650 a, 650b by way of their respective exposed surfaces 650 a_s, 650 b_s.

The RF transistor amplifier device of FIG. 15D may be formed, forexample, by constructing the RF transistor amplifier device of FIG. 15Aand then performing a planarizing operation on portions of theencapsulating material 625 to expose the surfaces 650 a_s, 650 b_s ofthe first and/or second circuit elements 650 a, 650 b.

The RF transistor amplifier devices illustrated in FIGS. 15A to 15D maybe utilized in multiple packaging configurations. FIGS. 16A to 16Dillustrate the use of packaging similar to that discussed herein withrespect to FIGS. 10A, 10B, and 14A to 14D. For example, the circuitrymodule 610B and the RF transistor amplifier die 210 may be placed in anopen-cavity semiconductor package 1600 a_1, 1600 a_2 (FIGS. 16A, 16B) oran OMP package 1600 b_1, 1600 b_2 (FIGS. 16C, 16D). In some embodiments,a spacer layer 245 may be utilized with first and second auxiliaryspacers 246 a, 246 b in an open-cavity semiconductor package 1600 a_1(FIG. 16A) or an OMP package 1600 b_1 (FIG. 16C). In some embodiments,an integrated spacer layer 245′ may be utilized with an open-cavitysemiconductor package 1600 a_2 (FIG. 16B) or an OMP package 1600 b_2(FIG. 16D). Elements in FIGS. 16A to 16D of the semiconductor packages1600 a_1, 1600 a_2, 1600 b_1, and 1600 b_2 that are similar to thosepreviously discussed with respect to other figures, such as FIGS. 10Aand 10B, will not be discussed further for the sake of brevity. In someembodiments, the semiconductor packages 1600 a_1, 1600 a_2, 1600 b_1,and 1600 b_2 may accommodate an RF transistor amplifier device where thegate lead pad 682B and drain lead pad 684B are exposed on a lowersurface of the circuitry module 610B. In FIGS. 16A to 16D, RF transistoramplifier die 210 is illustrated as being directly coupled to thecircuitry module 610B in the semiconductor packages 1600 a_1, 1600 a_2,1600 b_1, and 1600 b_2, but it will be understood that the RF transistoramplifier die 210 could also be coupled to the circuitry module viacoupling element 270 or utilizing an on-die RDL, mutatis mutandis.

Referring to FIGS. 16A and 16C, the first and second auxiliary spacers246 a, 246 b may be connected and/or directly contact the carriersubstrate 410. In this manner, the first and second auxiliary spacers246 a, 246 b may be configured to thermally dissipate heat from and/orprovide an electrical signal (e.g., a ground signal) to the first andsecond circuit elements 650 a, 650 b. Depending on the electrical andthermal requirements for the first and second circuit elements 650 a,650 b, additional terminal/bonding/spacer structures can be utilizedwith at least one of the first and second circuit elements 650 a, 650 bto provide an electrical, thermal, and/or mechanical interface betweenone of more of the at least one of the first and second circuit elements650 a, 650 b and the substrate 410.

Referring to FIGS. 16B and 16D, the first and second auxiliary spacers246 a, 246 b may be replaced with an integrated spacer layer 245′ thatis coupled to the first circuit element 650 a, the second circuitelement 650 b, and/or the RF transistor amplifier die 210. Theintegrated spacer layer 245′ may be connected and/or directly contactthe carrier substrate 410. The integrated spacer layer 245′ may have aplanar or a non-planar upper surface. In some embodiments, additionallayers may be respectively disposed between the first and second circuitelements 650 a, 650 b and the integrated spacer layer 245′ or betweenthe integrated spacer layer 245′ and the carrier substrate 410. (e.g.,additional spacer layers).

The embodiments described herein provide an improved RF transistoramplifier and improved packaging incorporating such an RF transistoramplifier. By avoiding and/or reducing the use of back side vias, someembodiments of the present invention provide for improved thermalmanagement of a power amplifier. Moreover, by locating the contacts ofthe power amplifier on a same side of the device, interconnect andcircuitry modules may be utilized which may reduce the need for wirebonding. As a result, the RF transistor amplifier and associated packagemay exhibit improved performance and thermal properties overconventional devices. The benefits of the direct bonding provided byembodiments of the present invention are reduction of form factor, lowelectrical resistance, as well as improvement of communication speed.

As discussed above, pursuant to embodiments of the present invention,Group III nitride-based RF transistor amplifiers 200, 200′, 200″(collectively 200) may include transistor dies 210 having gateterminals, drain terminals, and source terminals all located on the same(e.g., top) side or surface 212 of the RF transistor amplifier die 210,also referred to herein as the transistor die 210 or die 210. The RFtransistor amplifiers 200 may not include bond wires for the gate and/ordrain connections, which may reduce an amount of inductance present inthe circuit. Since all three of the gate, drain and source terminals areon the top side 212 of the transistor die 210, the RF transistoramplifiers according to embodiments of the present invention may bemounted in a flip chip arrangement in which the transistor die 210 ismounted on another substrate, such as on the surface of an interconnectstructure 310, 610 as described above. In some embodiments, the oppositeside 214 of the transistor die 210 can be mounted on a thermallyconductive carrier substrate or submount 410, such as a metal slug,leadframe, or flange, to provide improved thermal dissipation of theheat generated by the die from the amplifier package.

The interconnect structure may be implemented by any of the circuitrymodules (e.g., 310, 310′, 310″ (collectively 310) or 610, 610′, 610A-C(collectively 610)) discussed herein. The interconnect structure may bean interposer structure, such as a dielectric base structure withintegrated conductive traces, vias and/or circuitry extending thereinand/or thereon, or other multi-layer laminate or PCB structure. Theconductive traces or patterns (e.g., 373, 673, 1173) may provide variousrouting and/or circuitry within the interconnect structure.

The interconnect structure may include circuit elements (e.g., 350 a-b(collectively 350) or 650 a-b (collectively 650)) of the RF transistoramplifier, on one more surfaces thereof. The circuit elements may beconfigured to provide, for example, impedance matching and/or harmonictermination circuitry. For instance, the conductive traces or patternsof the interconnect structure 310, 610 may electrically couple thecircuit elements between the gate terminal 222 and an input lead 415A,and/or between the drain terminal 224 and an output lead 415B.

As described above, the circuit elements 350, 650 may include passiveelectrical components, including resistors/transmission lines,capacitors, and/or inductors, which may be implemented (at leastpartially) in surface mount devices (SMD), integrated passive devices(IPD), and combinations thereof. IPDs may include inductors, capacitors,and/or other passive electrical components, and may be fabricated usingstandard semiconductor processing techniques such as thin film and/orphotolithography processing. IPDs can be flip chip mountable or wirebondable components, and may include thin film substrates such assilicon, alumina, or glass.

In further embodiments described herein, the interposer or otherinterconnect structure and the passive electrical components on asurface thereof may collectively implement a “passive module,” alsoreferred to herein as a passive component assembly. An active transistordie and any conductive structures (e.g., pillars or coupling elementsthereon) may collectively implement an “active module,” also referred toherein as an active component assembly. The active component assemblymay be provided on a surface of the passive component assembly (e.g. ona top surface or on a bottom surface). The active module and passivemodule may be coupled by flip chip connection, in some embodiments witha standoff for mechanical support and/or thermal conduction. The activemodule may include an active GaN on SiC die and RDL or heat spreader.Examples of active modules are shown and described herein with referenceto FIGS. 20A to 20C. The passive module may include various passivecomponents, such as IPDs, SMDs, laminate-based transmission lines etc.,e.g., for impedance matching and/or harmonic termination. Examples ofpassive modules are shown and described herein with reference to FIGS.19A to 19C. The passive modules described herein may be electricallytested and screened before integration with the active modules, whichmay improve yield and reduce costs.

Embodiments of the present invention may also allow for stackedcomponent connections (e.g., in the Z-direction) and separate electricalground paths from the main heat conduction path, which may otherwise bedifficult or impossible without a flip chip interconnection scheme.Also, separating the active and passive modules of a packaged device mayallow for electrical testing and/or screening before finalpackaging/assembly, which can improve yield and reduce costs. Thestandoff structures may not only provide mechanical support to thelaminate or interposer for assembly flexibility, but may also provideanother heat extraction path if a high thermal conductivity material ischosen.

In some embodiments, the passive component assembly or module mayinclude the transistor die 210 on the same side or surface of theinterconnect structure as the passive electrical components. Forexample, as described above with reference to FIGS. 6A-6B, 7C-7E, and8A-8B, the circuit elements 650 and the die 210 are provided on the samesurface of the interconnect structure 610, which may be referred toherein as an active module on same side of passive module (AMSPM)configuration. In some embodiments, the passive component assembly ormodule may include the transistor die 210 on an opposite surface of theinterconnect structure than the passive electrical components. Forexample, in FIGS. 3A to 3E, 4A to 4C, and 5A to 5C, the circuit elements350 and the die 210 are provided on opposite sides or opposing surfacesof the interconnect structure 310, which may be referred to herein as anactive module on backside of passive module (AMBPM) configuration.

The AMSPM and AMBPM configurations described herein may include manyvariations of active and passive component assemblies. FIGS. 19A, 19B,and 19C illustrate various examples of passive component assemblies 1905a, 1905 b, 1905 c (collectively 1905) according to some embodiments ofthe present invention. As shown in FIGS. 19A-19C, the passive componentassemblies 1905 respectively include a circuitry module or otherinterconnect structure 310″. The circuitry module 310″ includes internalconductive patterns 373 and one or more passive electrical components1750 a, 1750 b, 1750 c/c′/c″ (collectively 1750) on a first surface 312.In some embodiments, circuitry module 310″ may be formed as a printedcircuit board (PCB) or redistribution layer (RDL) laminate structure,with the conductive patterns 373 implemented as conductive structureswithin the substrate of the PCB or the RDL laminate structure.

The conductive patterns 373 may provide various routing and/or circuitrywithin the circuitry module 310″, such that a die 210 may be mounted onthe first surface 312 (in an AMSPM configuration) and/or on the secondsurface 314 (in an AMBPM configuration) of the interconnect structure310″. For example, the conductive patterns 373 may electrically connectinterconnection pads 372, 374, 376 on the first surface 312 of thecircuitry module 310″ to one another and/or to interconnection pads 322,324, 326 on a second surface 314 of the circuitry module 310″.

In particular, in FIGS. 19A, 19B, and 19C, the interconnection pads 322,324, 326 are configured to be coupled to the gate terminal 222″, thedrain terminal 224″, and the source terminal 226″ of a die 210 that ismounted on the second surface 314 opposite the passive component(s)1750. In some embodiments, the interconnection pads 372, 374, 376 may beconfigured to be coupled to the gate terminal 222″, the drain terminal224″, and the source terminal 226″ of a die 210 that is mounted on thefirst surface 312 adjacent the passive component(s) 1750. Thoughillustrated by way of example as a single pads, one or more of theinterconnection pads 322, 324, 326, 372, 374, 376 may be implemented bymultiple pads.

The passive electrical components 1750 may includeresistors/transmission lines, capacitors, and/or inductors, that areimplemented in SMDs and/or IPDs. In the examples of FIGS. 19A-19C, thepassive electrical components 1750 a are arranged for electricalconnection to an input lead of a package, the passive electricalcomponents 1750 b are arranged for electrical connection to an outputlead of the package, and the passive electrical components 1750 c arearranged for electrical connection between the components 1750 a and1750 b and one or more terminals 222″, 224″, 226″ of the die 210.

The passive electrical components 1750 may be attached to respectiveinterconnection pads 372, 374, 376 on the first surface 312 of thecircuitry module 310″ in surface mount (e.g., 1750 c), wirebond (e.g.,1750 c′), or flip-chip (e.g., 1750 c″) configurations. In particular,FIG. 19A illustrates each of the passive electrical components 1750 a,1750 b, 1750 c in a surface mount configuration. FIG. 19B illustrates acombination of surface mount components 1750 a, 1750 b with a wirebondcomponent 1750 c′. FIG. 19C illustrates a combination of surface mountcomponents 1750 a, 1750 b with a flip-chip component 1750″. In theflip-chip configuration, the passive electrical components 1750 c″ mayinclude conductive pads that are aligned with and electrically coupledto one or more interconnection pads 372, 374, 376. In any of theexamples of FIGS. 19A-19C, the passive electrical components 1750 may bepreassembled, e.g., encased in a mold structure (e.g., 2240 as shown inFIG. 22) that is separate from a package overmold material (e.g., 1740),on the first surface 312 of the circuitry module 310″.

Conductive leads 415A, 415B (as shown in FIGS. 17-18 and 21A to 24C)allow the RF transistor amplifier 200 to be connected to externaldevices/circuits/power sources. The leads 415A, 415B may be coupled tothe circuitry module 310″ using, for example, wire bonds or a conductivedie attach material. In some embodiments (e.g., FIG. 18), the leads 415Aand 415B may be coupled to the interconnection pads on the first surface312 of the circuitry module 310″ (e.g., to interconnection pads 372 and374, respectively). In some embodiments (e.g., FIG. 17), the leads 415Aand 415B may be coupled to the interconnection pads on the secondsurface 314 (e.g., to interconnection pads 322 and 324, respectively).In some embodiments, the leads 415A, 415B may be directly coupled to theinterconnection pads, such that the use of wire bonds to connect the RFtransistor amplifier 200 to leads 415A, 415B may be avoided and/orreduced. Although primarily illustrated with reference to two leads 415Aand 415B, embodiments of the present invention are not so limited. Insome embodiments, three or more leads may be provided, for example,coupled to the interconnection pads 322 or 372 (e.g., as gate leads),324 or 374 (e.g., as drain leads), and 326 or 376 (e.g., as sourceleads).

The passive electrical components 1750 may thereby be electricallycoupled between the gate terminal 222″ and the first (e.g., input) lead415A of the transistor amplifier, and/or between the drain terminal 224″and the second (e.g., output) lead 415B of the transistor amplifier. Inparticular, an RF signal input to the RF transistor amplifier 200 on theinput lead 415A may be passed through the circuitry module 310″ topassive electrical components 1750 a, 1750 c and from there to a gateterminal 222″ of the transistor die 210, and the amplified output RFsignal may be passed from the drain terminal 224″ of the transistor die210 to the passive electrical components 1750 c, 1750 b and from therethrough the circuitry module 310″ where the RF signal is output throughoutput lead 415B.

The passive electrical components 1750 coupled by the circuitry module310″ may be configured to provide, for example, input matching circuits,output matching circuits, and/or harmonic termination circuits that areused to impedance match at the fundamental frequency and/or to terminateintermodulation products to ground. The use of passive componentassemblies 1905 described herein may thus provide greater flexibility inthat different performance characteristics (e.g., to address harmonicsat different frequencies, different impedances, etc.) for differentapplications may be achieved by swapping passive component assemblies1905 and/or the passive electrical components 1750. In addition, thepassive component assemblies 1905 may be electrically tested beforeintegration with the active component assemblies described herein, whichmay improve yield and reduce product costs. As such, passive componentassemblies 1905 in accordance with embodiments of the present inventionmay be configured to provide a modular approach for achieving RFtransistor amplifiers with desired performance characteristics.

The AMSPM and AMBPM configurations described herein may likewise includevariations of the active component assemblies. FIGS. 20A, 20B, and 20Cillustrate examples of active component assemblies 2005 a, 2005 b, 2005c (collectively 2005) according to some embodiments of the presentinvention. As shown in FIG. 20A, an example active component assembly2005 a may include an active die 210 (e.g., a Group III-nitride orSiC-based semiconductor die). The gate terminal 222″, drain terminal224″, and/or source terminal 226″ may be implemented by conductivepillar structures (e.g., copper pillars). In the example of FIG. 20A,all of the conductive pillar structures 222″, 224″, 226″ protrude from afirst or active surface 212 of the die 210, i.e., the “top” surface 212adjacent the active channel 2 (e.g., the 2 DEG layer). FIG. 20A thusillustrates a flip-chip configuration of the active die 210, with thecontacts 222″, 224″, and 226″ on one side 212 of the die 210 (e.g.,facing “down” when connected to the circuitry module 310″), and thegrowth substrate on the opposite side 214 (e.g., facing “up” whenconnected to the circuitry module 310″). However, it will be understoodthat one or more of the gate terminal 222″, drain terminal 224″, andsource terminal 226″ may protrude from or may otherwise be implementedon the second or inactive surface 214 of the die 210.

FIG. 20B illustrates an example active component assembly configuration2005 b in which the die 210 including the conductive pillar structures222″, 224″, 226″ are electrically connected to a coupling element 270.The coupling element 270 includes a gate connection pad 272, a drainconnection pad 274, a source connection pad 276, and conductive patterns273. The conductive patterns 273 electrically connect the gateconnection pad 272 and the drain connection pad 274, and the sourceconnection pad 276 to the gate terminal 222″, drain terminal 224″, andsource terminal 226″ of the die 210 (which, as noted above, may beimplemented by conductive pillar structures). An encapsulating structure277 provides a package including the die 210 and the coupling element270. For example, the die 210, conductive pillar structures 222″, 224″,226″, and the coupling element 270 may be implemented in aredistribution layer (RDL) package. The encapsulating material 277 maybe formed of a plastic or a plastic polymer compound, but the presentinvention is not limited thereto. In some embodiments, the encapsulatingmaterial 277 may include a polymer with fillers. In the example shown inFIG. 20B, the connection pads 272, 274, 276 and conductive patterns 273are arranged in a fan-out configuration that increases separation of theconnections to the respective source, gate, and drain terminals, but itwill be understood that other configurations (e.g., a fan-inconfiguration) may be similarly implemented.

FIG. 20C illustrates an example active component assembly configuration2005 c in which the conductive pillar structures 222″, 224″, 226″protrude from the first or active surface 212 of the die 210, and thesecond or inactive surface 214 of the die 210 is mounted on a thermallyconductive substrate 410 (such as a metal slug, leadframe, flange, orother heatsink). The thermally conductive substrate 410 can provideimproved thermal dissipation of the heat generated by the die 210 fromthe amplifier package.

In any of the example active component assemblies 2005 a, 2005 b, 2005c, the die 210 may be mounted in a flip chip arrangement on the firstsurface 312 (in an AMSPM configuration) or the second surface 314 (in anAMBPM configuration) of an interconnect structure 310″, that is, withthe gate terminal 222″, the drain terminal 224″, and the source terminal226″ facing the surface 312 or 314 of interconnect structure 310″. Inthe example of FIG. 20B, the coupling element 270 may be providedbetween the first surface 212 of the die and the interconnect structure310″. Also, while illustrated in FIGS. 20A-20C with reference tospecific examples, elements of one or more the example active componentassemblies 2005 a, 2005 b, 2005 c may be combined in some embodiments.For example, the inactive surface 214 of the die 210 may be exposed bythe encapsulating structure 277 in the active component assembly 2005 bof FIG. 20B, and may be mounted on the thermally conductive substrate410 of FIG. 20C.

Further embodiments of the present invention are described below withreference to various combinations of active component assemblies (e.g.,2005 a, 2005 b, 2005 c) and passive component assemblies (e.g., 1905 a,1905 b, 1905 c), mounted on the first side 312 or second side 314 of thepassive component assemblies. It will be understood that theseembodiments are provided by way of illustration rather than limitation,and that any and all configurations of the passive component assembly2005 and active component assembly 1905 are included in the scope of thepresent invention.

FIG. 17 is a schematic cross-sectional view of a semiconductor package1700 for an RF transistor amplifier according to some embodiments of thepresent invention. In particular, FIG. 17 illustrates an example package1700 including an active component assembly 2005 coupled to a passivecomponent assembly 1905 in an AMSPM configuration, where the die 210 ison a surface 312 of the interconnect structure or circuitry module 310″adjacent one or more passive electrical components 1750 on the samesurface 312. The description of FIG. 17 will focus on elements of the RFtransistor amplifier that may differ from those previously described indetail above.

As shown in FIG. 17, an active component assembly 2005 (e.g., the activecomponent assembly 2005 b) is provided on a passive component assembly1905, such that exposed interconnection pads 372, 374, and 376 on thefirst surface 312 of the circuitry module 310″ are electrically coupledto the gate connection pad 272, the drain connection pad 274, and thesource connection pad 276 of the coupling element 270, respectively (andthus, are electrically coupled to the gate terminal 222″, drain terminal224″, and source terminal 226″ of the die 210, respectively). However,it will be understood that the coupling element 270 may be omitted insome active component assemblies (e.g., 2005 a, 2005 c), and thetransistor die 210 may be mounted on the first surface 312 with the gateterminal 222″, drain terminal 224″, and source terminal 226″ directlycoupled to the interconnection pads 322, 324, and 326. The passiveelectrical components 1750 are attached to respective interconnectionpads 372, 374, 376 on the surface 312 of the circuitry module 310″, insurface mount (e.g., 1750 a, 1750 b), wirebond (e.g., 1750 c′), and/orflip-chip configurations, adjacent to the active component assembly2005.

In the example AMSPM configuration of FIG. 17, a thermally conductivesubstrate 410 (e.g., a metal slug, leadframe, or flange) is mounted on asurface of the active component assembly 2005 (in particular, on asurface of the encapsulating material 277) opposite the passivecomponent assembly 1905 for improved thermal dissipation of the heatgenerated by the die 210. The active component assembly 2005 and passivecomponent assembly 1905 may be at least partially encased in an overmoldmaterial 1740. The overmold material 1740 may be formed of a plastic ora plastic polymer compound, which may be injection molded around theactive component assembly 2005 and/or the passive component assembly1905, thereby providing protection from the outside environment.

In FIG. 17, the conductive leads 415A and 415B are mounted on thepassive component assembly 1905 (in particular, on the second surface314 of the circuitry module 310″ and electrically coupled to the exposedinterconnection pads 322 and 324, respectively) opposite the die 210 toprovide input RF signals to the die (e.g., to the gate terminal 222″ viapassive components 1750 a, 1750 c′, and coupling element 270) and toprovide amplified output RF signals from the die 210 (e.g., from thedrain terminal 224″ via coupling element 270 and passive components 1750c′, 1750 b). However, it will be understood that the leads 415A, 415Bmay be mounted on the same surface as the die 210 (e.g., on the firstsurface 312 of the circuitry module 310″ and protruding from theovermold material 1740) in some embodiments.

FIG. 18 is a schematic cross-sectional view of a semiconductor package1800 for an RF transistor amplifier according to some embodiments of thepresent invention. In particular, FIG. 18 illustrates an example package1800 including an active component assembly 2005 coupled to a passivecomponent assembly 1905 in an AMBPM configuration, where the die 210 ison a surface 314 of the interconnect structure or circuitry module 310″opposite the surface 312 having the passive electrical components 1750thereon. The description of FIG. 18 will focus on elements of the RFtransistor amplifier that may differ from those previously described indetail above.

As shown in FIG. 18, an active component assembly 2005 (e.g., the activecomponent assembly 2005 a) is provided on a passive component assembly1905 (e.g., the passive component assembly 1905 b) such that exposedinterconnection pads 322, 324, and 326 on the second surface 314 of thecircuitry module 310″ are electrically coupled to the gate terminal222″, drain terminal 224″, and source terminal 226″ of the die 210,respectively. In particular, the transistor die 210 is mounted on thesurface 314 of the circuitry module 310″, with the conductive pillars222″, 224″, and 226″ (defining the gate, drain, and source terminals)directly coupled to the interconnection pads 322, 324, and 326,respectively. The passive electrical components 1750 are attached torespective interconnection pads 372, 374, 376 on the opposite surface312 of the circuitry module 310″, in surface mount (e.g., 1750 a, 1750b), wirebond (e.g., 1750 c′), and/or flip-chip configurations.

In the example AMBPM configuration of FIG. 18, a thermally conductivesubstrate 410 (e.g., a metal slug, leadframe, or flange) is mounted(e.g., using a thermal layer 240) on a surface of the active componentassembly 2005 opposite the passive component assembly 1905 for improvedthermal dissipation of the heat generated by the die 210. In someembodiments, the thermal layer 240 may be omitted.

The active component assembly 2005 and passive component assembly 1905are encased in an overmold material 1740. The conductive leads 415A and415B protrude from the overmold 1740 to provide input RF signals to thedie 210 (e.g., to the gate terminal 222″) and amplified output RFsignals from the die 210 (e.g., from the drain terminal 224″). In theexample of FIG. 18, the leads 415A and 415B are mounted on the firstsurface 312 of the circuitry module 310″ and electrically coupled to theexposed interconnection pads 372 and 374, opposite the second surface314 having the die 210 thereon. However, it will be understood that theleads 415A, 415B may be mounted on the same surface as the die 210(e.g., on the second surface 314 of the circuitry module 310″ andelectrically coupled to the exposed interconnection pads 322 and 324) insome embodiments.

FIGS. 21A to 24D illustrate various example packages for RF transistoramplifiers in AMBPM configurations according to some embodiments of thepresent invention. The examples of FIGS. 21A to 24B include packageleads 415A and 415B that are electrically coupled to the passivecomponent assembly modules 1905 by wirebond connections 2115, and may bealso referred to herein as wirebond-to-lead packages. The examples ofFIGS. 24C and 24D illustrate package leads 415A and 415B implemented onthe laminate structure of the circuitry module 310″ itself, in overmoldand open-cavity configurations, respectively. While illustrated withleads 415A and 415B electrically connected to interconnection pads 372and 374 on the top surface 312 of the circuitry modules 310″, it will beunderstood that one or more of the leads 415A and 415B may be similarlyconnected to the interconnection pads 322 and 324 on the bottom surface314 in some embodiments. The description of FIGS. 21A to 24D will focuson elements of the RF transistor amplifier that may differ from thosepreviously described in detail above.

In particular, FIG. 21A is a schematic cross-sectional view and FIG. 21Bis a schematic plan view of a semiconductor package 2100 including anactive component assembly 2005 (e.g., the active component assembly 2005a) provided on a passive component assembly 1905 (e.g., the passivecomponent assembly 1905 b) in an AMBPM configuration, where the die 210is on a surface 314 of the interconnect structure or circuitry module310″ opposite the surface 312 having the passive electrical components1750 thereon. Exposed interconnection pads 322, 324, and 326 on thesecond surface 314 of the circuitry module 310″ are electrically coupledto the gate terminal 222″, drain terminal 224″, and source terminal 226″of the die 210, respectively. The passive electrical components 1750 areattached to respective interconnection pads 372, 374, 376 on theopposite surface 312 of the circuitry module 310″, in surface mount(e.g., 1750 a, 1750 b), wirebond (e.g., 1750 c′), and/or flip-chipconfigurations.

Still referring to FIGS. 21A and 21B, a thermally conductive substrate410 (e.g., a metal slug, leadframe, or flange) is mounted (e.g., using athermal layer 240) on a surface of the active component assembly 2005opposite the passive component assembly 1905 for improved thermaldissipation of the heat generated by the die 210. In some embodiments,the thermal layer 240 may be omitted.

The active component assembly 2005 and passive component assembly 1905are encased in an overmold material 1740. As shown in FIG. 21B, thepassive component assembly 1905 includes one or more cavities 2140(e.g., holes or openings 2140 in the circuitry module 310″). Theovermold material 1740 may extend into or may otherwise be provided inthe opening(s) 2140, which may enhance adhesion. The conductive leads415A and 415B are electrically coupled to the exposed interconnectionpads 372 and 374 of the circuitry module 310″ by wirebonds 2115, andprotrude from the overmold 1740 to provide input RF signals to the die210 (e.g., to the gate terminal 222″) and amplified output RF signalsfrom the die 210 (e.g., from the drain terminal 224″).

FIG. 22 is a schematic cross-sectional view of a semiconductor package2200 including an active component assembly 2005 (e.g., the activecomponent assembly 2005 a) provided on a passive component assembly 1905(e.g., the passive component assembly 1905 b) in an AMBPM configuration,where the die 210 is on a surface 314 of the interconnect structure orcircuitry module 310″ opposite the surface 312 having the passiveelectrical components 1750 thereon. As shown in FIG. 22, the passiveelectrical components 1750 are pre-assembled in an initial moldstructure 2240, which is provided on the surface 312 of the circuitrymodule 310″. The mold structure 2240 is distinct from the overmoldmaterial 1740, which is subsequently formed to encapsulate the activeand passive component assemblies 2005 and 1905 in the package 2200(e.g., on the thermally conductive substrate 410). As such, the surface314 including the die 210 thereon may be free of the mold structure2240. In some embodiments the mold structure 2240 may be formed of aharder or softer material than the overmold material 1740. The examplepackage 2200 of FIG. 22 may include other components or may otherwise besimilar to wirebond-to-lead package 2100 of FIGS. 21A and 21B.

FIGS. 23A and 23B are schematic cross-sectional views of semiconductorpackages 2300 a and 2300 b including an active component assembly 2005(in particular, the active component assemblies 2005 a and 2005 b,respectively) provided on a passive component assembly 1905 (inparticular, the passive component assembly 1905 b) in an AMBPMconfiguration, where the die 210 is on a surface 314 of the interconnectstructure or circuitry module 310″ opposite the surface 312 having thepassive electrical components 1750 thereon. The packages 2300 a and 2300b are implemented as an open-air or open-cavity package.

As shown in FIGS. 23A and 23B, the packages 2300 a and 2300 b mayinclude a carrier substrate (e.g., thermally conductive substrate 410),sidewalls 2320, and a lid 2325. The substrate 410, sidewalls 2320, andlid 2325 may define an internal cavity 2330. The active componentassembly 2005 and the passive component assembly 1905 are disposedinside the internal cavity 2330, and may be enclosed in and protected bythe sidewalls 2320 and the lid 2325. The sidewalls 2320 may providemechanical support for the leads 415A, 415B, which are electricallyconnected to the exposed interconnection pads 372, 374 by wirebondconnections 2115. In some embodiments, the passive component assembly1905 may include the passive electrical components 1750 pre-assembled ina mold structure 2240 on the first surface 312 of the circuitry module310″. As such, the packages 2300 a, 2300 b may include characteristicsof both molded and open-cavity packages. The example packages 2300 a and2300 b of FIGS. 23A and 23B may include other components or mayotherwise be similar to wirebond-to-lead packages 2100, 2200 describedherein.

FIG. 24A is a schematic cross-sectional view and FIG. 24B is a schematicplan view of a semiconductor package 2400 including an active componentassembly 2005 (e.g., the active component assembly 2005 a) provided on apassive component assembly 1905 (e.g., the passive component assembly1905 b) in an AMBPM configuration, where the die 210 is on a surface 314of the interconnect structure or circuitry module 310″ opposite thesurface 312 having the passive electrical components 1750 thereon. Insome embodiments, the passive component assembly 1905 may include thepassive electrical components 1750 pre-assembled in a mold structure2240 on the first surface 312 of the circuitry module 310″.

The package 2400 further includes one or more mechanical supportstructures 2000 s on the second surface 314 of the circuitry module 310″adjacent the die 210. The mechanical support structure(s) 2000 s (alsoreferred to herein as a standoff assembly 2000 s) extend between thesubstrate (e.g., the thermally conductive flange 410) and the secondsurface 314 of the circuitry module 310″. The mechanical supportstructure(s) 2000 s may extend along or adjacent one or more sides ofthe die 210, and may have a thickness substantially similar to athickness of the active component assembly 2005, and can provideimproved mechanical support for the passive component assembly 1905stacked thereon. In some embodiments, the mechanical supportstructure(s) 2000 s may be formed of one or more materials that mayimprove thermal conduction, e.g., to conduct heat away from the activecomponent assembly 2005 and/or the passive component assembly 1905 andtoward the thermally conductive substrate 410. An overmold material 1740is subsequently formed to encapsulate the active and passive componentassemblies 2005 and 1905 in the package 2400.

FIG. 24C is a schematic cross-sectional view of a semiconductor package2400′ including an active component assembly 2005 (e.g., the activecomponent assembly 2005 a) provided on a passive component assembly 1905(e.g., the passive component assembly 1905 c) in an AMBPM configuration,where the die 210 is on a surface 314 of the interconnect structure orcircuitry module 310″ opposite the surface 312 having the passiveelectrical components 1750 thereon. The package 2400′ is similar to thepackage 2400 of (including the mechanical support structure(s) 2000 sbetween the flange 410 and the second surface 314 of the circuitrymodule 310″), but with the package leads 415A and 415B implemented onthe circuitry module 310″ itself (rather than coupled to the passivecomponent assembly module 1905 by wirebond connections).

Although illustrated in FIGS. 24A to 24C as an overmold package 2400including an overmold material 1740 by way of example, the packages2400, 2400′ may be implemented as an open-air or open-cavity package insome embodiments, as shown in FIG. 24D. In particular, FIG. 24D is aschematic cross-sectional view of an open-cavity package 2400″ in whichthe package leads 415A and 415B are implemented on the circuitry module310″ (rather than coupled to the passive component assembly module 1905by wirebond connections). The open-cavity package 2400″ is otherwisesimilar to the package 2400′ of FIG. 24C (including the mechanicalsupport structure(s) 2000 s between the flange 410 and the secondsurface 314 of the circuitry module 310″), but with the active componentassembly 2005 and the passive component assembly 1905 disposed inside aninternal air cavity 2330 and enclosed in and protected by sidewalls 2320and a lid 2325.

The example packages 2400, 2400′, 2400″ of FIGS. 24A to 24D may includeother components or may otherwise be similar to wirebond-to-leadpackages 2100, 2200, 2300 a, 2300 b described herein.

FIGS. 25A, 25B, and 25C illustrate various example packages for RFtransistor amplifiers in AMBPM configurations according to someembodiments of the present invention. In particular, FIGS. 25A, 25B, and25C are schematic cross-sectional views of semiconductor packages 2500a, 2500 b, and 2500 c including an active component assembly 2005 (inparticular, the active component assembly 2005 a in FIGS. 25A and 25B,and the active component assembly 2005 b in FIG. 25C) provided on apassive component assembly 1905 (in particular, the passive componentassembly 1905 b) in an AMBPM configuration, where the die 210 is on asurface 314 of the interconnect structure or circuitry module 310″opposite the surface 312 having the passive electrical components 1750thereon. The description of FIGS. 25A-25C will focus on elements of theRF transistor amplifier that may differ from those previously describedin detail above.

The examples of FIGS. 25A to 25C include package leads 415A and 415Bthat are directly mounted on the passive component assembly 1905, thatis, without wirebond connections. For instance, FIG. 25A illustrates anexample package 2500 a in which the leads 415A, 415B are mounted on thesecond surface 314 of the circuitry module 310″ of the passive componentassembly 1905, adjacent the active component assembly 2005. FIG. 25Billustrates an example package 2500 b in which the leads 415A, 415B aremounted on the first surface 312 of the circuitry module 310″ of thepassive component assembly 1905, adjacent the passive electricalcomponents 1750. FIG. 25C illustrates an example package 2500 c in whichthe leads 415A, 415B are mounted on the second surface 314 of thecircuitry module 310″ adjacent the active component assembly 2005, whichincludes the die 210 and a coupling element 270 in an RDL package.

In FIGS. 25A to 25C, the passive component assembly 1905 includes thepassive electrical components 1750 pre-assembled in a mold structure2240 on the first surface 312 of the circuitry module 310″, but it willbe understood that the mold structure 2240 may be omitted in someembodiments. Likewise, the packages 2500 a, 2500 b, 2500 c areillustrated as overmold packages including an overmold material 1740 byway of example, but may be implemented as open-air or open-cavitypackages in some embodiments. The example package 2500 a, 2500 b, 2500 cof FIGS. 25A to 25C may include other components or may otherwise besimilar to the package 1800 described herein.

More generally, embodiments of the present invention may include anycombination of the active component assemblies shown in FIGS. 20A to 20Cand the passive component assemblies shown in FIGS. 19A to 19C, and arenot limited to the examples specifically shown in the figures. Suchcombinations of active and passive component assemblies may be used toprovide various electronic capabilities to the RF transistor amplifier200. For example, the circuit elements 1750 a, 1750 b, 1750 c mayimplement impedances (including, for example, resistive, inductive, andcapacitive elements) that may be used for impedance matching and/orharmonic termination. As noted above, the circuit elements 1750 a, 1750b, 1750 c may be or may include surface mount devices, IPDs, and/orother passive electrical components, and may implement harmonic and/orinput/output impedance matching elements.

FIGS. 26A, 26B, and 26C are schematic circuit diagrams illustratingvarious circuit topologies that may be implemented by combinations ofactive and passive component assemblies according to some embodiments ofthe present invention. For example, the circuit elements 1750 a, 1750 cmay be configured to provide input impedance matching capabilities. Dueto coupling between the input lead 415A and the transistor die 210, thecircuit elements 1750 a, 1750 c may be capable of affecting and/orconditioning a signal provided to the gate terminals of the transistordie 210. Similarly, the circuit element 1750 b, 1750 c may be configuredto provide output impedance matching capabilities. Due to couplingbetween the output lead 415B and the transistor die 210, the circuitelements 1750 b, 1750 c may be capable of affecting and/or conditioninga signal provided from the drain terminal of the transistor die 210.More generally, the circuit elements 1750 may be configured to provideinput impedance matching circuitry, output impedance matching circuitry,and/or harmonic termination circuitry for packaged transistor amplifiersas described herein.

The passive component assemblies 1905 can allow for ease of assembly ofRF transistor amplifier packages with different characteristics and/oradditional functionality, such as impedance matching and/or harmonictermination. For example, by providing passive component assemblies 1905including circuitry modules 310″ with exposed interconnection pads, oneor more of the circuit elements 1750 a, 1750 b, 1750 c can be replacedand/or configured to provide application-specific impedancecharacteristics. That is, transistor packages may be designed and/orreconfigured to provide different input/output matching and/or harmonictermination characteristics using the same circuitry module 310″populated with different arrangements and/or combinations of the passiveelectronic components 1750 on the exposed interconnection pads 322, 324,326, 372, 374, 376.

Thus, different functionality and/or capability may be coupled to an RFtransistor amplifier 200 of an active component assembly 2005 simply byusing a different passive component assembly 1905 and/or differentlypopulating the passive component assembly 1905 with differentcombinations and/or arrangements of passive electrical components 1750.Embodiments of the present invention may be used in high power RFtransistors for cellular or aerospace and defense (A&D) applications,such as 20 W or higher average output power RF transistors for 5G basestation application at 3.5 GHz and above. Embodiments of the presentinvention may also provide lower cost products at higher frequencies.

Various embodiments have been described herein with reference to theaccompanying drawings in which example embodiments are shown. Theseembodiments may, however, be embodied in different forms and should notbe construed as limited to the embodiments set forth herein. Rather,these embodiments are provided so that this disclosure is thorough andcomplete and fully conveys the inventive concept to those skilled in theart. Various modifications to the example embodiments and the genericprinciples and features described herein will be readily apparent. Inthe drawings, the sizes and relative sizes of layers and regions are notshown to scale, and in some instances may be exaggerated for clarity.

It will be understood that, although the terms “first,” “second,” etc.may be used herein to describe various elements, these elements shouldnot be limited by these terms. These terms are only used to distinguishone element from another. For example, a first element could be termed asecond element, and, similarly, a second element could be termed a firstelement, without departing from the scope of the present invention. Asused herein, the term “and/or” includes any and all combinations of oneor more of the associated listed items.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention. Asused herein, the singular forms “a,” “an,” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises,”“comprising,” “includes,” and/or “including” when used herein, specifythe presence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components, and/or groups thereof.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this invention belongs. It will befurther understood that terms used herein should be interpreted ashaving a meaning that is consistent with their meaning in the context ofthis specification and the relevant art and will not be interpreted inan idealized or overly formal sense unless expressly so defined herein.

It will be understood that when an element such as a layer, region, orsubstrate is referred to as being “on,” “attached,” or extending “onto”another element, it can be directly on the other element or interveningelements may also be present. In contrast, when an element is referredto as being “directly on” or “directly attached” or extending “directlyonto” another element, there are no intervening elements present. Itwill also be understood that when an element is referred to as being“connected” or “coupled” to another element, it can be directlyconnected or coupled to the other element or intervening elements may bepresent. In contrast, when an element is referred to as being “directlyconnected” or “directly coupled” to another element, there are nointervening elements present.

Relative terms such as “below” or “above” or “upper” or “lower” or“horizontal” or “lateral” or “vertical” may be used herein to describe arelationship of one element, layer or region to another element, layeror region as illustrated in the figures. It will be understood thatthese terms are intended to encompass different orientations of thedevice in addition to the orientation depicted in the figures.

Embodiments of the invention are described herein with reference tocross-section illustrations that are schematic illustrations ofidealized embodiments (and intermediate structures) of the invention.The thickness of layers and regions in the drawings may be exaggeratedfor clarity. Additionally, variations from the shapes of theillustrations as a result, for example, of manufacturing techniquesand/or tolerances, are to be expected. Thus, embodiments of theinvention should not be construed as limited to the particular shapes ofregions illustrated herein but are to include deviations in shapes thatresult, for example, from manufacturing. Elements illustrated by dottedlines may be optional in the embodiments illustrated.

Like numbers refer to like elements throughout. Thus, the same orsimilar numbers may be described with reference to other drawings evenif they are neither mentioned nor described in the correspondingdrawing. Also, elements that are not denoted by reference numbers may bedescribed with reference to other drawings.

In the drawings and specification, there have been disclosed typicalembodiments of the invention and, although specific terms are employed,they are used in a generic and descriptive sense only and not forpurposes of limitation, the scope of the invention being set forth inthe following claims.

1. A transistor device, comprising: a transistor die comprising a gateterminal, a drain terminal, and a source terminal; a circuitry module onthe transistor die and electrically coupled to the gate terminal, thedrain terminal, and/or the source terminal; and one or more passiveelectrical components on a first surface of the circuitry module,wherein the one or more passive electrical components are electricallycoupled between the gate terminal and a first lead of the transistordevice and/or between the drain terminal and a second lead of thetransistor device.
 2. The transistor device of claim 1, wherein thetransistor die is on the first surface of the circuitry module adjacentthe one or more passive electrical components.
 3. The transistor deviceof claim 1, wherein the transistor die is on a second surface of thecircuitry module opposite the first surface.
 4. The transistor device ofclaim 1, wherein the one or more passive electrical components comprisea surface mount device and/or an integrated passive device.
 5. Thetransistor device of claim 4, wherein the one or more passive electricalcomponents are electrically coupled to the circuitry module by one ormore wire bonds.
 6. The transistor device of claim 4, wherein the one ormore passive electrical components include a plurality of conductivepads that are aligned with and electrically coupled to connection padsof the circuitry module.
 7. The transistor device of claim 1, whereinthe gate terminal, the drain terminal, and the source terminal compriseconductive pillar structures adjacent a first surface of the transistordie and facing the circuitry module.
 8. The transistor device of claim7, further comprising: a coupling element between the first surface ofthe transistor die and the circuitry module, the coupling elementcomprising a redistribution layer structure including conductivecoupling patterns that are electrically coupled to the gate terminal,the drain terminal, and the source terminal.
 9. The transistor device ofclaim 7, further comprising: a thermally conductive flange on a secondsurface of the transistor die that is opposite the circuitry module. 10.The transistor device of claim 9, wherein the transistor die is on asecond surface of the circuitry module opposite the first surface, andfurther comprising: a mechanical support structure on the second surfaceof the circuitry module adjacent the transistor die, wherein themechanical support structure is between the thermally conductive flangeand the second surface of the circuitry module.
 11. The transistordevice of claim 9, further comprising sidewalls and a lid, wherein thethermally conductive flange, the sidewalls, and the lid define aninternal cavity, and wherein the transistor die and the circuitry moduleare within the internal cavity.
 12. The transistor device of claim 9,further comprising an overmold material on the circuitry module, thetransistor die, and the thermally conductive flange.
 13. The transistordevice of claim 12, wherein the circuitry module comprises one or moreopenings therein, and wherein the overmold material extends into the oneor more openings.
 14. The transistor device of claim 1, furthercomprising a mold structure on the one or more passive electricalcomponents on the first surface of the circuitry module, wherein asecond surface of the circuitry module opposite the first surface isfree of the mold structure.
 15. The transistor device of claim 1,wherein the first and/or second leads are coupled to one of the firstsurface of the circuitry module or a second surface of the circuitrymodule opposite the first surface.
 16. A transistor device, comprising:a transistor die comprising a gate terminal, a drain terminal, and asource terminal; and a passive component assembly electrically coupledto the gate terminal, the drain terminal, and/or the source terminal,the passive component assembly comprising one or more passive electricalcomponents on a first surface thereof, wherein the transistor die is ona second surface of the passive component assembly opposite the firstsurface.
 17. The transistor device of claim 16, wherein the one or morepassive electrical components are electrically coupled between the gateterminal and a first lead of the transistor device, and/or between thedrain terminal and a second lead of the transistor device.
 18. Thetransistor device of claim 16, wherein the one or more passiveelectrical components comprise a surface mount device and/or anintegrated passive device. 19.-24. (canceled)
 25. The transistor deviceof claim 16, further comprising a mold structure on the one or morepassive electrical components on the first surface of the passivecomponent assembly, wherein the second surface of the passive componentassembly opposite the first surface is free of the mold structure.
 26. Atransistor device, comprising: a transistor die comprising a gateterminal, a drain terminal, and a source terminal; and a passivecomponent assembly electrically coupled to the gate terminal, the drainterminal, and/or the source terminal, the passive component assemblycomprising one or more passive electrical components on a first surfacethereof, wherein the transistor die is on the first surface of thepassive component assembly adjacent the one or more passive electricalcomponents.
 27. The transistor device of claim 26, wherein the one ormore passive electrical components are electrically coupled between thegate terminal and a first lead of the transistor device, and/or betweenthe drain terminal and a second lead of the transistor device.
 28. Thetransistor device of claim 26, wherein the one or more passiveelectrical components comprise a surface mount device and/or anintegrated passive device. 29.-31. (canceled)
 32. The transistor deviceof claim 30, further comprising: a thermally conductive flange on asecond surface of the transistor die that is opposite the first surfaceof the passive component assembly. 33.-34. (canceled)